|
Volumn , Issue , 1996, Pages
|
Advantages of LDMOS in high power linear amplification
a |
Author keywords
[No Author keywords available]
|
Indexed keywords
AMPLIFICATION;
AMPLIFIERS (ELECTRONIC);
AMPLITUDE MODULATION;
BIPOLAR TRANSISTORS;
ELECTRIC CURRENTS;
GAIN CONTROL;
INTERMODULATION;
NETWORKS (CIRCUITS);
PERFORMANCE;
TECHNOLOGY;
THERMODYNAMICS;
BIASING CIRCUITS;
HIGH POWER LINEAR AMPLIFICATION;
HIGH POWER MULTICARRIER AMPLICATION;
MOTOROLA;
MULTICHANNEL CELLULAR AMPLIFIER;
OPTIMUM QUIESCENT CURRENT;
OVERDRIVE CAPABILITY;
RUGGEDNESS;
SATURATION POWER;
THERMAL COEFFICIENT;
MOS DEVICES;
|
EID: 0030120775
PISSN: 0960667X
EISSN: None
Source Type: Journal
DOI: None Document Type: Article |
Times cited : (18)
|
References (0)
|