Comparison of different extraction methods of small-signal parameters for SOI MOSFETs.

2002 32nd European Microwave Conference, EuMC 2002

Volumn , Issue , 2002, Pages

  Dehan, M ^a   Raskin, J P ^a   Vanhoenacker Janvier, D ^a  

^a UNIVERSITÉ CATHOLIQUE DE LOUVAIN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; EXTRACTION; HETEROJUNCTION BIPOLAR TRANSISTORS; SILICON ON INSULATOR TECHNOLOGY;

EXTRACTION METHOD; EXTRACTION PROCEDURE; INVERSION METHODS; PARASITIC CAPACITANCE; SATURATION METHOD; SILICON-ON-INSULATOR MOSFETS; SMALL SIGNAL PARAMETERS; THREE CATEGORIES;

MOSFET DEVICES;

EID: 84897495264     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EUMA.2002.339268     Document Type: Conference Paper

References (6)

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6. A Bracale, V Ferlet-Cavrois, N Fel, J L Gauthier, J L Pelloie, and J du Port de Poncharra, A new approach for SOI small signal parameters extraction, Analog integrated circuit and signal processing, Kluwer Academic Publisher, Vol.25, November 2000