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Materials Letters

Volumn 124, Issue , 2014, Pages 47-49

Ferroelectric domain wall motion in epitaxial PbTiO3 and BiFeO3 thin films

(3) Kim, Woo Hee a Yoon, Sung Min b Son, Jong Yeog b

a Stanford University (United States)

b Kyung Hee University (South Korea)

Author keywords

Activation energy; Domain wall speed; Ferroelectric properties; Ferroelectric thin films; PFM

Indexed keywords

ACTIVATION ENERGY; DOMAIN WALLS; EPITAXIAL GROWTH; FERROELECTRIC MATERIALS; FERROELECTRIC THIN FILMS; FERROELECTRICITY;

DOMAIN WALL MOTION; FERROELECTRIC DOMAIN SWITCHING; FERROELECTRIC DOMAINS; FERROELECTRIC PROPERTY; PFM; REMNANT POLARIZATIONS; SWITCHING BEHAVIORS; SWITCHING CURRENTS;

THIN FILMS;

EID: 84897445984 PISSN: 0167577X EISSN: None Source Type: Journal
DOI: 10.1016/j.matlet.2014.03.069 Document Type: Article

Times cited : (18)

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