Band gap tunning in BN-doped graphene systems with high carrier mobility

Applied Physics Letters

Volumn 104, Issue 7, 2014, Pages

  Kaloni, T P ^a   Joshi, R P ^b   Adhikari, N P ^b   Schwingenschlogl U ^a  

^a KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Saudi Arabia)

^b TRIBHUVAN UNIVERSITY   (Nepal)

Author keywords

[No Author keywords available]

Indexed keywords

DENSITY FUNCTIONAL THEORY; ELECTRONIC PROPERTIES; ENERGY GAP; HALL MOBILITY; HOLE MOBILITY;

BI-LAYER; COMPARATIVE STUDIES; DOPING LEVELS; EFFECTIVE MASS; HIGH CARRIER MOBILITY; MULTI-LAYER SYSTEM; TRI LAYERS;

GRAPHENE;

EID: 84897433353     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4866383     Document Type: Article

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