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Volumn 443, Issue , 2014, Pages 70-75
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Electronic properties of hemispherical quantum dot/wetting layer with and without hydrogenic donor impurity
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Author keywords
Binding energy; Hemispherical quantum dot; Hydrogenic donor impurity; Nanostructure; Optical property; Wetting layer
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Indexed keywords
BINDING ENERGY;
ELECTRONIC PROPERTIES;
ELECTRONIC STRUCTURE;
NANOSTRUCTURES;
OPTICAL PROPERTIES;
PROBES;
SEMICONDUCTOR QUANTUM DOTS;
WETTING;
CONTINUOUS WAVES;
EFFECTIVE MASS APPROXIMATION;
GROUP VELOCITIES;
HEMISPHERICAL QUANTUM DOT;
HYDROGENIC DONOR IMPURITY;
HYDROGENIC IMPURITIES;
NONLINEAR ABSORPTIONS;
WETTING LAYER;
SEMICONDUCTOR QUANTUM WELLS;
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EID: 84897417324
PISSN: 09214526
EISSN: None
Source Type: Journal
DOI: 10.1016/j.physb.2014.03.022 Document Type: Article |
Times cited : (18)
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References (39)
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