Ground state transition energies in biased InAs/GaAs quantum dots

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 27, Issue 1-2, 2005, Pages 67-76

  Ali, Y Turki Ben ^a   Bastard, G ^b   Bennaceur, R ^a  

^a FACULTÉ DES SCIENCES DE TUNIS   (Tunisia)

^b ECOLE NORMALE SUPÉRIEURE   (France)

Author keywords

III V semiconductors; Quantum dots; Self assembled systems

Indexed keywords

ATOMIC FORCE MICROSCOPY; DATA STORAGE EQUIPMENT; ELECTRIC FIELD EFFECTS; ELECTRON TRANSITIONS; GROUND STATE; HAMILTONIANS; KINETIC ENERGY; LASERS; NANOSTRUCTURED MATERIALS; NUMERICAL ANALYSIS; SELF ASSEMBLY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS;

ELECTRON-HOLE; III-V SEMICONDUCTORS; SELF-ASSEMBLED SYSTEMS; TRANSITION ENERGIES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 14044263488     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2004.10.007     Document Type: Article

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