Current induced doping in graphene-based transistor with asymmetrical contact barriers

Applied Physics Letters

Volumn 104, Issue 8, 2014, Pages

  Chen, Wei ^a   Qin, Shiqiao ^a   Zhang, Xue Ao ^a   Zhang, Sen ^a   Fang, Jingyue ^a   Wang, Guang ^a   Wang, Chaocheng ^b   Wang, Li ^a,b   Chang, Shengli ^a  

^a NATIONAL UNIVERSITY OF DEFENSE TECHNOLOGY   (China)

^b NANCHANG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DRAIN CURRENT; GRAPHENE;

ASYMMETRICAL CONTACTS; CHARGE CARRIER TYPES; CURRENT CROWDING EFFECT; CURRENT FLOWING; SOURCE AND DRAIN ELECTRODES;

GRAPHENE TRANSISTORS;

EID: 84896799926     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4867018     Document Type: Article

References (25)

1. A. K. Geim and K. S. Novoselov, Nature Mater. 6, 183 (2007). 10.1038/nmat1849
2. F. Bonaccorso, Z. Sun, T. Hasan, and A. C. Ferrari, Nat. Photonics 4, 611 (2010). 10.1038/nphoton.2010.186
3. W. Chen, G. Wang, S. Q. Qin, C. C. Wang, J. Y. Fang, J. L. Qi, X. A. Zhang, L. Wang, H. H. Jia, and S. L. Chang, AIP Adv. 3, 042123 (2013). 10.1063/1.4802889
4. F. Schwierz, Nat. Nanotechnol. 5, 487 (2010). 10.1038/nnano.2010.89
5. F. N. Xia, T. Mueller, Y. M. Lin, A. Valdes-Garcia, and P. Avouris, Nat. Nanotechnol. 4, 839 (2009). 10.1038/nnano.2009.292
6. L. Liao, Y. C. Lin, M. Q. Bao, R. Cheng, J. W. Bai, Y. Liu, Y. Q. Qu, K. L. Wang, Y. Huang, and X. F. Duan, Nature 467, 305 (2010). 10.1038/nature09405
7. K. Nagashio, T. Nishimura, K. Kita, and A. Toriumi, Tech. Dig.-Int. Electron Devices Meet. 2009, 565.
8. Y. M. Blanter and I. Martin, Phys. Rev. B 76, 155433 (2007). 10.1103/PhysRevB.76.155433
9. K. L. Grosse, M. H. Bae, F. F. Lian, E. Pop, and W. P. King, Nat. Nanotechnol. 6, 287 (2011). 10.1038/nnano.2011.39
10. K. Nagashio, T. Nishimura, K. Kita, and A. Toriumi, Appl. Phys. Lett. 97, 143514 (2010). 10.1063/1.3491804
11. B. K. Kim, E. K. Jeon, J. J. Kim, and J. O. Lee, J. Nanomater. 2010, 575472. 10.1155/2010/575472
12. C. G. Lu, L. An, Q. Fu, J. Liu, H. Zhang, and J. Murduck, Appl. Phys. Lett. 88, 133501 (2006). 10.1063/1.2190707
13. D. Basko, Science 334, 610 (2011). 10.1126/science.1214560
14. J. C. W. Song, M. S. Rudner, C. M. Marcus, and L. S. Levitov, Nano Lett. 11, 4688 (2011). 10.1021/nl202318u
15. X. D. Xu, N. M. Gabor, J. S. Alden, A. M. van der Zande, and P. L. McEuen, Nano Lett. 10, 562 (2010). 10.1021/nl903451y
16. J. Moser, A. Barreiro, and A. Bachtold, Appl. Phys. Lett. 91, 163513 (2007). 10.1063/1.2789673
17. S. Hertel, F. Kisslinger, J. Jobst, D. Waldmann, M. Krieger, and H. B. Weber, Appl. Phys. Lett. 98, 212109 (2011). 10.1063/1.3592841
18. G. Giovannetti, P. A. Khomyakov, G. Brocks, V. M. Karpan, J. van den Brink, and P. J. Kelly, Phys. Rev. Lett. 101, 026803 (2008). 10.1103/PhysRevLett.101.026803
19. F. N. Xia, T. Mueller, G. M. Roksana, M. Freitag, Y. M. Lin, J. Tsang, V. Perebeinos, and P. Avouris, Nano Lett. 9, 1039 (2009). 10.1021/nl8033812
20. J. Park, Y. H. Ahn, and R. V. Carlos, Nano Lett. 9, 1742 (2009). 10.1021/nl8029493
21. X. S. Li, Y. W. Zhu, W. W. Cai, M. Borysiak, B. Y. Han, D. Chen, R. D. Piner, L. Colombo, and R. S. Ruoff, Nano Lett. 9, 4359 (2009). 10.1021/nl902623y
22. C. J. Shih, G. L. C. Paulus, Q. H. Wang, Z. Jin, D. Blankschtein, and M. S. Strano, Langmuir 28, 8579 (2012). 10.1021/la3008816
23. R. Jackson and S. Graham, Appl. Phys. Lett. 94, 012109 (2009). 10.1063/1.3067819
24. C. Lan, P. Srisungsitthisunti, P. B. Amama, T. S. Fisher, X. Xu, and R. G. Reifenbergr, Nanotechnology 19, 125703 (2008). 10.1088/0957-4484/19/12/125703
25. A. D. Franklin and Z. Chen, Nat. Nanotechnol. 5, 858 (2010). 10.1038/nnano.2010.220