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Volumn , Issue , 2013, Pages

Atomic-level engineering of phase change material for novel fast-switching and high-endurance PCM for storage class memory application

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EID: 84894357826     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2013.6724726     Document Type: Conference Paper
Times cited : (22)

References (10)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.