Impact of the channel thickness on the performance of ultrathin InGaAs channel MOSFET devices

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2013, Pages

  Alian, Alireza ^a   Pourghaderi, Mohammad Ali ^a   Mols, Yves ^a   Cantoro, Mirco ^a,b   Ivanov, Tsvetan ^a,c   Collaert, Nadine ^a   Thean, Aaron ^a  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84894341654     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2013.6724644     Document Type: Conference Paper

References (8)

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8. Stier, Phys. Rev. B 55 (12), 7726-7732 (1997).