Photoemission spectra and effective masses of n- and p-type oxide semiconductors from first principles: ZnO, CdO, SnO2, MnO, and NiO

Physica Status Solidi (A) Applications and Materials Science

Volumn 211, Issue 1, 2014, Pages 74-81

  Rödl, Claudia ^a,b   Schleife, André ^b,c  

^a LABORATOIRE DES SOLIDES IRRADIÉS   (France)

^b European Theoretical Spectroscopy Facility (ETSF)   (Belgium)

^c LAWRENCE LIVERMORE NATIONAL LABORATORY   (United States)

Author keywords

density of states; doping; effective masses; oxide semiconductors; photoemission spectra; quasiparticle calculations

Indexed keywords

DENSITY OF STATE; EFFECTIVE MASS; OXIDE SEMICONDUCTOR; PHOTOEMISSION SPECTRA; QUASIPARTICLE CALCULATIONS;

CALCULATIONS; DOPING (ADDITIVES); ELECTRONIC STRUCTURE; HOLE CONCENTRATION; MANGANESE OXIDE; PHOTOEMISSION; PHOTOIONIZATION; SEMICONDUCTOR DEVICE MANUFACTURE; ZINC OXIDE;

SEMICONDUCTOR DOPING;

EID: 84892905555     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.201330181     Document Type: Article

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