CdS based novel photo-impedance light sensor

Semiconductor Science and Technology

Volumn 29, Issue 2, 2014, Pages

  Saxena, T ^a   Rumyantsev, S L ^a   Dutta, P S ^a   Shur, M ^a  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

CdS; photocapacitance; sensor

Indexed keywords

CAPACITANCE RESPONSE; CDS; DEVICE CAPACITANCE; FREQUENCY DISPERSION; ILLUMINATION INTENSITY; PHOTOCAPACITANCE; RADIO-FREQUENCY OSCILLATORS; SIGNAL FREQUENCIES;

CADMIUM SULFIDE; METAL INSULATOR BOUNDARIES; OSCILLATORS (ELECTRONIC);

SENSORS;

EID: 84892629907     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/29/2/025002     Document Type: Article

References (11)

1. Ciplys D, Chivukula V S, Sereika A, Rimeika R, Shur M S, Hu X and Gaska R 2009 Wireless UV sensor based on photocapacitive effect in GaN Electron. Lett. 45 653-4
2. Chivukula V, Ciplys D, Sereika A, Shur M and Yang J 2010 AlGaN based highly sensitive radio-frequency UV sensor Appl. Phys. Lett. 96 163504
3. Faci S, Tripon-Canseliet C, Benlarbi-Delaï A, Alquie G, Formont S and Chazelas J 2009 Optical generation of microwave signal for FMCW radar applications Microw. Opt. Technol. Lett. 51 690-3
4. Ahlstrom E, Matthei W G and Gärtner W W 1959 Use of surface barrier photodiodes as fast response photocapacitors Rev. Sci. Instrum. 30 592
5. Webb G W 1992 Instrumentation apparatus and methods utilizing photoconductors as light-modulated dielectrics US Patent No. 5,159,486
6. Malyshev S A, Andrievski V F, Budko T O, Chad C, Chizh A L, Gushchinskaya E V, Baolid L, Romanova L I and Zaporozhets E V 2000 Photovaractor for optically controlled microwave circuits 13th Int. Conf. on Microwaves, Radar and Wireless Comm. (Wrocław, Poland,) vol 2 pp 401-3
7. Chakrabarti P, Abraham B R, Dhingra A, Das A, Sharan B S and Maheshwari V 1992 Effect of illumination on the characteristics of a proposed hetero-MIS diode IEEE Trans. Electron Devices 39 507-14
8. Lopez D, Monsieur F and Balestra F 2008 MOS capacitors characterization under illumination Proc. 26th Int. Conf. on Microelectronics (Niš, Serbia,) 583-5
9. Grosvalet J and Jund C 1967 Influence of illumination on MIS capacitances in the strong inversion region IEEE Trans. Electron Devices 14 777-80
10. Paul B C, Satyam M and Selvarajan A 1999 A novel method of optical detection using a capacitive device IEEE Trans. Electron Devices 46 324-8
11. Shah M, Karimov K and Sayyad M H 2010 Organic semiconductor nickel phthalocyanine-based photocapacitive and photoresistive detector Semicond. Sci. Technol. 25 075014