MOS capacitors characterization under illumination

"2008 26th International Conference on Microelectronics, Proceedings, MIEL 2008"

Volumn , Issue , 2008, Pages 583-585

  Lopez, D ^a,b   Monsieur, F ^a   Balestra, F ^b  

^a STMICROELECTRONICS   (France)

^b Institut de Microelectronique   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CAPACITORS; CIVIL AVIATION; DIELECTRIC DEVICES; ELECTRIC EQUIPMENT; IMAGE SENSORS; METAL RECOVERY; MICROELECTRONICS; SEPARATION; TRANSISTORS;

CMOS IMAGE SENSOR; INTERNATIONAL CONFERENCES; MEASUREMENT FREQUENCY; METAL-OXIDE- SEMICONDUCTORCAPACITORS;

MOS CAPACITORS;

EID: 51749114043     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICMEL.2008.4559353     Document Type: Conference Paper

References (5)

1. M. Cohen and J. P. David, "Radiation effects on active pixel sensors," in RADESC Proc., 1999, pp. 450-456.
2. A. J. .P. Theuwissen, "Influence of terrestrial cosmic rays on the reliability of CCD Image Sensors," IEDM Technical Digest. IEEE International Electron Devices Meeting, 2005, pp. 811-814.
3. J. Grosvalet and C. Jund, "Influence of Illumination on MIS Capacitances in the Strong Inversion Region," IEEE Transactions on electronic devices, vol. 14, 777-780, November 1967.
4. A. Thewissen, "CMOS Image Sensors: State-Of-The-Art and future perspectives," ESSDERC Proc., 2007, pp. 21-27
5. L.F. Register, E. Rosenbaum, K. Yang, "Analytic model for direct tunneling current in polycrystalline silicon-gate metal-oxide-semiconductor devices", APL, Vol 74, no3, January 1999.