Crystal structure and microwave dielectric properties of an ultralow-temperature-fired (AgBi)0.5WO4 ceramic

European Journal of Inorganic Chemistry

Volumn , Issue 2, 2014, Pages 296-301

  Zhou, Di ^a,b   Pang, Li Xia ^c   Xie, Hui Dong ^d   Guo, Jing ^a   He, Bin ^a   Qi, Ze Ming ^e   Shao, Tao ^e   Yao, Xi ^a   Randall, Clive A ^f  

^a XI'AN JIAOTONG UNIVERSITY   (China)

^b State Key Laboratory of Processing for Non ferrous Metal and Featured Materials   (China)

^c XI'AN TECHNOLOGICAL UNIVERSITY   (China)

^d XI'AN UNIVERSITY OF ARCHITECTURE AND TECHNOLOGY   (China)

^e UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

^f PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

Bismuth; Ceramics; Dielectric materials; Silver; Tungsten

Indexed keywords

ALUMINUM; BISMUTH; BISMUTH COMPOUNDS; CERAMIC MATERIALS; CRYSTAL STRUCTURE; DIELECTRIC MATERIALS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; PERMITTIVITY; SILVER COMPOUNDS; SINTERING; SOLID STATE REACTIONS; TEMPERATURE; TUNGSTEN COMPOUNDS; X RAY DIFFRACTION ANALYSIS; ELECTRODES; TUNGSTEN;

ALUMINIUM POWDER; CERAMIC; COFIRED; CRYSTALS STRUCTURES; ELECTRODE MATERIAL; NEGATIVE-TEMPERATURE-COEFFICIENTS; RELATIVE PERMITTIVITY; SINGLE PHASE BULK MATERIALS; SINTERING TEMPERATURES; ULTRA LOW TEMPERATURES;

SILVER;

EID: 84892164032     PISSN: 14341948     EISSN: 10990682     Source Type: Journal    
DOI: 10.1002/ejic.201300789     Document Type: Article

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