Two selective growth modes for graphene on a Cu substrate using thermal chemical vapor deposition

Carbon

Volumn 68, Issue , 2014, Pages 87-94

  Song, Wooseok ^a,b   Jeon, Cheolho ^c   Kim, Soo Youn ^a   Kim, Yooseok ^a   Kim, Sung Hwan ^a   Lee, Su Il ^a   Jung, Dae Sung ^a   Jung, Min Wook ^b   An, Ki Seok ^b   Park, Chong Yun ^a  

^a Sungkyunkwan University   (South Korea)

^b Korea Research Institute of Chemical Technology   (South Korea)

^c Korea Basic Science Institute (KBSI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; FEEDSTOCKS; METAL CLADDING; PRECIPITATION (CHEMICAL); DEPOSITION; METHANE;

CARBON FEEDSTOCK; CRITICAL PRESSURES; GRAPHENE LAYERS; HIGH PARTIAL PRESSURE; INJECTION TIME; SELECTIVE GROWTH; SURFACE ADSORPTION; THERMAL CHEMICAL VAPOR DEPOSITION;

GRAPHENE;

EID: 84891561738     PISSN: 00086223     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.carbon.2013.10.039     Document Type: Article

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