Doping-free intrinsic amorphous silicon thin-film solar cell having a simple structure of ${\rm Glass}/{\rm SnO}-{2}/{\rm MoO}-{3}/{\rm i}\hbox{-}{\rm a}\hbox{-}{\rm Si}/{\rm LiF}/{\rm Al}$

IEEE Electron Device Letters

Volumn 35, Issue 1, 2014, Pages 96-98

  Yang, Ji Hwan ^a   Kang, Sang Jung ^a   Hong, Yunho ^a   Lim, Koeng Su ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

rm Moo 3; Doping free; i A si solar cells; Lif

Indexed keywords

FILL FACTOR; LIF; SILICON THIN-FILM SOLAR CELLS; THIN-FILM SOLAR CELLS;

AMORPHOUS SILICON; GLASS; OPEN CIRCUIT VOLTAGE; SILICON; SILICON CARBIDE; SILICON SOLAR CELLS;

SEMICONDUCTOR DOPING;

EID: 84891523158     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2013.2289309     Document Type: Article

References (7)

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