메뉴 건너뛰기




Volumn 7, Issue 12, 2013, Pages 10518-10524

Metal-free, single-polymer device exhibits resistive memory effect

Author keywords

flexible substrates; metal filament; PEDOT:PSS; polymer electrodes; resistive memory; solution process

Indexed keywords

FLEXIBLE SUBSTRATE; METAL FILAMENTS; PEDOT:PSS; POLYMER ELECTRODES; RESISTIVE MEMORY; SOLUTION PROCESS;

EID: 84891368541     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn403873c     Document Type: Article
Times cited : (79)

References (24)
  • 2
    • 80052725554 scopus 로고    scopus 로고
    • Donor-Acceptor Polymers for Advanced Memory Device Applications
    • Liu, C.-L.; Chen, W.-C. Donor-Acceptor Polymers for Advanced Memory Device Applications Polym. Chem. 2011, 2, 2169-2174
    • (2011) Polym. Chem. , vol.2 , pp. 2169-2174
    • Liu, C.-L.1    Chen, W.-C.2
  • 3
    • 21544481793 scopus 로고
    • Electrical Switching and Memory Phenomena in Cu-TCNQ Thin Films
    • Potember, R. S.; Poehler, T. O.; Cowan, D. O. Electrical Switching and Memory Phenomena in Cu-TCNQ Thin Films Appl. Phys. Lett. 1979, 34, 405-407
    • (1979) Appl. Phys. Lett. , vol.34 , pp. 405-407
    • Potember, R.S.1    Poehler, T.O.2    Cowan, D.O.3
  • 4
    • 33846066361 scopus 로고    scopus 로고
    • Metal Filament Growth in Electrically Conductive Polymers for Nonvolatile Memory Application
    • Joo, W.-J.; Choi, T.-L.; Lee, J.; Lee, S. K.; Jung, M.-S.; Kim, N.; Kim, J. M. Metal Filament Growth in Electrically Conductive Polymers for Nonvolatile Memory Application J. Phys. Chem. B 2006, 110, 23812-23816
    • (2006) J. Phys. Chem. B , vol.110 , pp. 23812-23816
    • Joo, W.-J.1    Choi, T.-L.2    Lee, J.3    Lee, S.K.4    Jung, M.-S.5    Kim, N.6    Kim, J.M.7
  • 5
    • 48249100173 scopus 로고    scopus 로고
    • Bipolar Switching Characteristics of Nonvolatile Memory Devices Based on Poly(3,4-ethylenedioxythiophene):Poly(styrenesulfonate) Thin Film
    • Ha, H.; Kim, O. Bipolar Switching Characteristics of Nonvolatile Memory Devices Based on Poly(3,4-ethylenedioxythiophene):Poly(styrenesulfonate) Thin Film Appl. Phys. Lett. 2008, 93, 033309
    • (2008) Appl. Phys. Lett. , vol.93 , pp. 033309
    • Ha, H.1    Kim, O.2
  • 6
    • 79959405282 scopus 로고    scopus 로고
    • Nonvolatile Resistive Memory Device Based on Poly(3,4- ethylenedioxythiophene):Poly(styrene sulfonate) Thin Film for Transparent and Flexible Applications
    • Lee, J.; Ohyun, K. Nonvolatile Resistive Memory Device Based on Poly(3,4-ethylenedioxythiophene):Poly(styrene sulfonate) Thin Film for Transparent and Flexible Applications Jpn. J. Appl. Phys. 2011, 50, 06GF01
    • (2011) Jpn. J. Appl. Phys. , vol.50
    • Lee, J.1    Ohyun, K.2
  • 7
    • 67650759318 scopus 로고    scopus 로고
    • Organic Nonpolar Nonvolatile Resistive Switching in Poly(3,4-ethylene- dioxythiophene):Polystyrenesulfonate Thin Film
    • Liu, X.; Ji, Z.; Tu, D.; Shang, L.; Liu, J.; Liu, M.; Xie, C. Organic Nonpolar Nonvolatile Resistive Switching in Poly(3,4-ethylene-dioxythiophene): Polystyrenesulfonate Thin Film Org. Electron. 2009, 10, 1191-1194
    • (2009) Org. Electron. , vol.10 , pp. 1191-1194
    • Liu, X.1    Ji, Z.2    Tu, D.3    Shang, L.4    Liu, J.5    Liu, M.6    Xie, C.7
  • 8
    • 78650746269 scopus 로고    scopus 로고
    • Reproducible and Controllable Organic Resistive Memory Based on Al/Poly(3,4-ethylene-dioxythiophene):Poly(styrenesulfonate)/Al Structure
    • Wang, Z. S.; Zeng, F.; Yang, J.; Chen, C.; Yang, Y. C.; Pan, F. Reproducible and Controllable Organic Resistive Memory Based on Al/Poly(3,4-ethylene-dioxythiophene):Poly(styrenesulfonate)/Al Structure Appl. Phys. Lett. 2010, 97, 253301
    • (2010) Appl. Phys. Lett. , vol.97 , pp. 253301
    • Wang, Z.S.1    Zeng, F.2    Yang, J.3    Chen, C.4    Yang, Y.C.5    Pan, F.6
  • 9
    • 0345304916 scopus 로고    scopus 로고
    • A Polymer/Semiconductor Write-Once Read-Many-Times Memory
    • Moller, S.; Perlov, C.; Jackson, W.; Taussig, C.; Forrest, S. R. A Polymer/Semiconductor Write-Once Read-Many-Times Memory Nature 2003, 426, 166-169
    • (2003) Nature , vol.426 , pp. 166-169
    • Moller, S.1    Perlov, C.2    Jackson, W.3    Taussig, C.4    Forrest, S.R.5
  • 10
    • 77649237352 scopus 로고    scopus 로고
    • Bipolar Resistive Switching Characteristics of Poly(3,4-ethylene- dioxythiophene):Poly(styrenesulfonate) Thin Film
    • Jeong, H. Y.; Kim, J. Y.; Yoon, T. H.; Choi, S.-Y. Bipolar Resistive Switching Characteristics of Poly(3,4-ethylene-dioxythiophene): Poly(styrenesulfonate) Thin Film Curr. Appl. Phys. 2010, 10, e46-e49
    • (2010) Curr. Appl. Phys. , vol.10
    • Jeong, H.Y.1    Kim, J.Y.2    Yoon, T.H.3    Choi, S.-Y.4
  • 11
    • 77950092932 scopus 로고    scopus 로고
    • Electrode-Material-Dependent Switching Characteristics of Organic Nonvolatile Memory Devices Based on Poly(3,4-ethylenedioxythiophene): Poly(styrenesulfonate) Film
    • Ha, H.; Kim, O. Electrode-Material-Dependent Switching Characteristics of Organic Nonvolatile Memory Devices Based on Poly(3,4-ethylenedioxythiophene): Poly(styrenesulfonate) Film IEEE Electron. Device Lett. 2010, 31, 368-370
    • (2010) IEEE Electron. Device Lett. , vol.31 , pp. 368-370
    • Ha, H.1    Kim, O.2
  • 12
    • 47249145657 scopus 로고    scopus 로고
    • Effect of the Electrode Material on the Electrical-Switching Characteristics of Nonvolatile Memory Devices Based on Poly(o -anthranilic acid) Thin Films
    • Dongjin, L.; Sungsik, B.; Moonhor, R.; Ohyun, K. Effect of the Electrode Material on the Electrical-Switching Characteristics of Nonvolatile Memory Devices Based on Poly(o -anthranilic acid) Thin Films IEEE Electron Device Lett. 2008, 29, 694-697
    • (2008) IEEE Electron Device Lett. , vol.29 , pp. 694-697
    • Dongjin, L.1    Sungsik, B.2    Moonhor, R.3    Ohyun, K.4
  • 13
    • 33748758960 scopus 로고    scopus 로고
    • Tuning of Electrical Bistability in Organic Devices through Electrochemical Potential of Metal Contacts
    • Mukherjee, B.; Pal, A. J. Tuning of Electrical Bistability in Organic Devices through Electrochemical Potential of Metal Contacts Org. Electron. 2006, 7, 249-255
    • (2006) Org. Electron. , vol.7 , pp. 249-255
    • Mukherjee, B.1    Pal, A.J.2
  • 14
    • 84863077043 scopus 로고    scopus 로고
    • Resistive Switching Induced by Metallic Filaments Formation through Poly(3,4-ethylene-dioxythiopene):Poly(styrenesulfonate)
    • Wang, Z.; Zeng, F.; Yang, J.; Chen, C.; Pan, F. Resistive Switching Induced by Metallic Filaments Formation through Poly(3,4-ethylene-dioxythiopene) :Poly(styrenesulfonate) ACS Appl. Mater. Interfaces 2011, 4, 447-453
    • (2011) ACS Appl. Mater. Interfaces , vol.4 , pp. 447-453
    • Wang, Z.1    Zeng, F.2    Yang, J.3    Chen, C.4    Pan, F.5
  • 15
    • 34547476241 scopus 로고    scopus 로고
    • Study on Threshold Behavior of Operation Voltage in Metal Filament-Based Polymer Memory
    • Joo, W.-J.; Choi, T.-L.; Lee, K.-H.; Chung, Y. Study on Threshold Behavior of Operation Voltage in Metal Filament-Based Polymer Memory J. Phys. Chem. B 2007, 111, 7756-7760
    • (2007) J. Phys. Chem. B , vol.111 , pp. 7756-7760
    • Joo, W.-J.1    Choi, T.-L.2    Lee, K.-H.3    Chung, Y.4
  • 16
    • 84860324606 scopus 로고    scopus 로고
    • High-Performance Non-volatile Organic Ferroelectric Memory on Banknotes
    • Khan, M. A.; Bhansali, U. S.; Alshareef, H. N. High-Performance Non-volatile Organic Ferroelectric Memory on Banknotes Adv. Mater. 2012, 24, 2165-2170
    • (2012) Adv. Mater. , vol.24 , pp. 2165-2170
    • Khan, M.A.1    Bhansali, U.S.2    Alshareef, H.N.3
  • 17
    • 84861800103 scopus 로고    scopus 로고
    • Electrical Performance of Polymer Ferroelectric Capacitors Fabricated on Plastic Substrate Using Transparent Electrodes
    • Bhansali, U. S.; Khan, M. A.; Alshareef, H. N. Electrical Performance of Polymer Ferroelectric Capacitors Fabricated on Plastic Substrate Using Transparent Electrodes Org. Electron. 2012, 13, 1541-1545
    • (2012) Org. Electron. , vol.13 , pp. 1541-1545
    • Bhansali, U.S.1    Khan, M.A.2    Alshareef, H.N.3
  • 18
    • 84867537640 scopus 로고    scopus 로고
    • Doped Polymer Electrodes for High Performance Ferroelectric Capacitors on Plastic Substrates
    • Khan, M. A.; Bhansali, U. S.; Zhang, X. X.; Saleh, M. M.; Odeh, I.; Alshareef, H. N. Doped Polymer Electrodes for High Performance Ferroelectric Capacitors on Plastic Substrates Appl. Phys. Lett. 2012, 101, 143303
    • (2012) Appl. Phys. Lett. , vol.101 , pp. 143303
    • Khan, M.A.1    Bhansali, U.S.2    Zhang, X.X.3    Saleh, M.M.4    Odeh, I.5    Alshareef, H.N.6
  • 19
    • 84873681941 scopus 로고    scopus 로고
    • Organic Ferroelectric Memory Devices with Inkjet-Printed Polymer Electrodes on Flexible Substrates
    • Bhansali, U. S.; Khan, M. A.; Alshareef, H. N. Organic Ferroelectric Memory Devices with Inkjet-Printed Polymer Electrodes on Flexible Substrates Microelectron. Eng. 2013, 105, 68-73
    • (2013) Microelectron. Eng. , vol.105 , pp. 68-73
    • Bhansali, U.S.1    Khan, M.A.2    Alshareef, H.N.3
  • 20
    • 33748801714 scopus 로고    scopus 로고
    • Switching and Filamentary Conduction in Non-volatile Organic Memories
    • Cölle, M.; Büchel, M.; de Leeuw, D. M. Switching and Filamentary Conduction in Non-volatile Organic Memories Org. Electron. 2006, 7, 305-312
    • (2006) Org. Electron. , vol.7 , pp. 305-312
    • Cölle, M.1    Büchel, M.2    De Leeuw, D.M.3
  • 21
    • 1542320119 scopus 로고    scopus 로고
    • Poly(3,4-ethylenedioxythiophene) Nanoparticles Prepared in Aqueous DBSA Solutions
    • Choi, J. W.; Han, M. G.; Kim, S. Y.; Oh, S. G.; Im, S. S. Poly(3,4-ethylenedioxythiophene) Nanoparticles Prepared in Aqueous DBSA Solutions Synth. Met. 2004, 141, 293-299
    • (2004) Synth. Met. , vol.141 , pp. 293-299
    • Choi, J.W.1    Han, M.G.2    Kim, S.Y.3    Oh, S.G.4    Im, S.S.5
  • 24
    • 33749499535 scopus 로고    scopus 로고
    • Mechanisms for Current-Induced Conductivity Changes in a Conducting Polymer
    • Xu, X.; Register, R. A.; Forrest, S. R. Mechanisms for Current-Induced Conductivity Changes in a Conducting Polymer Appl. Phys. Lett. 2006, 89, 142109
    • (2006) Appl. Phys. Lett. , vol.89 , pp. 142109
    • Xu, X.1    Register, R.A.2    Forrest, S.R.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.