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Volumn 50, Issue 6 PART 2, 2011, Pages

Nonvolatile resistive memory device based on poly(3,4- ethylenedioxythiophene): Poly(styrene sulfonate) thin film for transparent and flexible applications

(2) Lee, Jungmoo a Kim, Ohyun a

a Pohang University of Science and Technology (POSTECH) (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMBIENT CONDITIONS; DATA RETENTION TESTS; INDIUM TIN OXIDE ELECTRODES; MEMORY CYCLES; MEMORY DEVICE; NON-VOLATILE; OXIDATION MECHANISMS; PEDOT:PSS; POLY(STYRENE SULFONATE); POLY-3 ,4-ETHYLENEDIOXYTHIOPHENE; SWITCHING CHARACTERISTICS; SWITCHING PROPERTIES;

CONDUCTING POLYMERS; INDIUM COMPOUNDS; STYRENE; TIN; TIN OXIDES;

INDIUM;

EID: 79959405282 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.50.06GF01 Document Type: Article

Times cited : (10)

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