SCOPUS 정보 검색 플랫폼

Superlattices and Microstructures

Volumn 66, Issue , 2014, Pages 96-104

Tailoring of boron-doped MnTe semiconductor-sensitized TiO2 photoelectrodes as near-infrared solar cell devices

(4) Tubtimtae, Auttasit a Hongto, Timakorn a Hongsith, Kritsada b,c Choopun, Supab b,c

a KASETSART UNIVERSITY (Thailand)

b CHIANG MAI UNIVERSITY (Thailand)

c Thailand Ministry of Science and Technology (Thailand)

Author keywords

Boron doping; Manganese telluride; Semiconductor sensitizer; Solar cells; Successive ionic layer adsorption and reaction

Indexed keywords

BORON-DOPING; CRYSTAL QUALITIES; MANGANESE TELLURIDE; PHOTOVOLTAIC PERFORMANCE; SEMICONDUCTOR-SENSITIZED SOLAR CELLS; SOLAR CELL DEVICES; SUCCESSIVE IONIC LAYER ADSORPTION AND REACTIONS; SYNTHESIS PROCEDURE;

ADSORPTION; ENERGY GAP; SEMICONDUCTOR DOPING; SOLAR CELLS; SYNTHESIS (CHEMICAL); TITANIUM DIOXIDE;

SEMICONDUCTING TELLURIUM COMPOUNDS;

EID: 84891292229 PISSN: 07496036 EISSN: 10963677 Source Type: Journal
DOI: 10.1016/j.spmi.2013.12.003 Document Type: Article

Times cited : (11)

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