Co-precipitation synthesis of nanostructured Cu3SbSe4 and its Sn-doped sample with high thermoelectric performance

Journal of the Chemical Society. Dalton Transactions

Volumn 43, Issue 4, 2014, Pages 1888-1896

  Li, Di ^a   Li, Rui ^a   Qin, Xiao Ying ^a   Song, Chun Jun ^a   Xin, Hong Xing ^a   Wang, Ling ^a   Zhang, Jian ^a   Guo, Guang Lei ^a   Zou, Tian Hua ^a   Liu, Yong Fei ^a   Zhu, Xiao Guang ^a  

^a INSTITUTE OF SOLID STATE PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; COBALT COMPOUNDS; COPPER COMPOUNDS; COPRECIPITATION; HOT PRESSING; SELENIUM COMPOUNDS; TEMPERATURE; THERMAL CONDUCTIVITY; THERMOELECTRICITY; TIN;

COPRECIPITATION SYNTHESIS; FIGURE OF MERITS; HOT PRESSING TEMPERATURE; LARGE-SCALE FABRICATION; LATTICE THERMAL CONDUCTIVITY; LOW TEMPERATURES; THERMOELECTRIC PERFORMANCE; THERMOELECTRIC PROPERTIES;

ANTIMONY COMPOUNDS;

EID: 84890825543     PISSN: 14779226     EISSN: None     Source Type: Journal    
DOI: 10.1039/c3dt52447g     Document Type: Article

References (25)

1. D.M. Rowe: Thermoelectric Handbook: Macro to Nano, Taylor & Francis Group, 2006.
2. T.M. Tritt: Semiconductors and semimetals, recent trends in thermoelectric materials research: part one to three, Academic, San Diego, CA, 2000.
3. M.G. Kanatzidis: Chem. Mater., 2010, 22: 648-659.
4. B. Poudel, Q. Hao, Y. Ma, Y. Lan, A. Minnich, B. Yu, X. Yan, D. Wang, A. Muto, D. Vashaee, X. Chen, J. Liu, M.S. Dresselhaus, G. Chen, Z. Ren: Science, 2008, 320: 634-638.
5. K. Biswas, J.Q. He, Q.C. Zhang, G.Y. Wang, C. Uher, V.P. Dravid, M.G. Kanatzidis: Nat. Chem., 2011, 3: 160-166.
6. S.N. Girard, J.Q. He, X.Y. Zhou, D. Shoemaker, C.M. Jaworski, C. Uher, V.P. Dravid, J.P. Heremans, M.G. Kanatzidis: J. Am. Chem. Soc., 2011, 133(41): 16588-16597.
7. R.Y. Wang, J.P. Feser, J.S. Lee, D.V. Talapin, R. Segalman, A. Majumdar: Nano Lett., 2008, 8(8): 2283-2288.
8. A. Soni, Y.Q. Shen, M. Yin, Y.Y. Zhao, L.G. Yu, X. Hu, Z.L. Dong, K.A. Khor, M.S. Dresselhaus, Q.H. Xiong: Nano Lett., 2012, 12: 4305-4310.
9. W.J. Xie, X.F. Tang, Y.G. Yan, Q.J. Zhang, T.M. Tritt: J. Appl. Phys., 2009, 105: 113713(1–8).
10. L.D. Hicks, M.S. Dresselhaus: Phys. Rev. B: Condens. Matter, 1993, 47: 12727-12731.
11. R.J. Mehta, Y. Zhang, C. Karthik, B. Singh, R.W. Siegel, T.B. Tasciuc, G. Ramanath: Nat. Mater., 2012, 11: 233-240.
12. Y.X. Zhao, J.S. Dyck, B.M. Hernandez, C. Burda: J. Am. Chem. Soc., 2010, 132: 4982-4983.
13. A. Soni, Y.Y. Zhao, L.G. Yu, M.K.K. Aik, M.S. Dresselhaus, Q.H. Xiong: Nano Lett., 2012, 12: 1203-1209.
14. Q.Y. Yan, H. Chen, W.W. Zhou, H.H. Hng, F.Y.C. Boey, J. Ma: Chem. Mater., 2008, 20: 6298-6300.
15. C.Y. Yang, F.Q. Huang, L.M. Wu, K. Xu: J. Phys. D: Appl. Phys., 2011, 44: 295404(1–5).
16. L.I. Berger: Semiconductor Materials, CRC Press, Boca Raton, FL, 1997, p. 267.
17. A. Pfitzner: Z. Kristallogr., 1995, 209: 685-685.
18. A. Bansal, T. Deutsch, J.E. Leisch, S. Warren and J.A. Turner: Proceedings of the 2001 DOE Hydrogen Program Review NREL/CP-570-30535.
19. M.X. Wang, G.H. Yue, X.Y. Fan, P.X. Yan: J. Cryst. Growth, 2008, 310: 3062-3066.
20. D. Li, R. Li, X.Y. Qin, J. Zhang, C.J. Song, L. Wang, H.X. Xin: CrystEngComm, 2013, 15: 7166-7170.
21. F.J. Fan, B. Yu, Y.X. Wang, Y.L. Zhu, X.J. Liu, S.H. Yu, Z.F. Ren: J. Am. Chem. Soc., 2011, 133: 15910-15913.
22. G.J. Snyder, E.S. Toberer: Nat. Mater., 2008, 7: 105-114.
23. V.I. Fistul: Heavily Doped Semiconductors, Plenum, New York, 1969, p. 155.
24. H.J. Trodahl: Phys. Rev. B: Condens. Matter, 1995, 51: 6175-6178.
25. D.P. Spitzer: J. Phys. Chem. Solids, 1970, 31: 19-40.