5diridium oxide as a material for spin-current detection

Nature Communications

Volumn 4, Issue , 2013, Pages

  Fujiwara, Kohei ^a,c   Fukuma, Yasuhiro ^a,d   Matsuno, Jobu ^a,e   Idzuchi, Hiroshi ^b   Niimi, Yasuhiro ^b   Otani, Yoshichika ^a,b,e   Takagi, Hidenori ^a,b  

^a RIKEN   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

^c OSAKA UNIVERSITY   (Japan)

^d KYUSHU INSTITUTE OF TECHNOLOGY   (Japan)

^e RIKEN Center for Emergent Matter Science   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALLOY; COPPER; IRIDIUM; OXIDE; PALLADIUM; TRANSITION ELEMENT;

ALLOY; COPPER; ELECTRIC FIELD; ELECTRONIC EQUIPMENT; MAGNETIC METHOD; PERFORMANCE ASSESSMENT;

ABSORPTION; ACCELERATION; ARTICLE; ELECTRIC POTENTIAL; ELECTRODE; ELECTRON; MAGNETIC FIELD; MATERIALS; PHYSICAL PHENOMENA; POLARIZATION; SPIN CURRENT; TEMPERATURE; TEMPERATURE DEPENDENCE;

EID: 84890767568     PISSN: None     EISSN: 20411723     Source Type: Journal    
DOI: 10.1038/ncomms3893     Document Type: Article

References (44)

1. Hirsch, J. Spin Hall effect. Phys. Rev. Lett. 83, 1834-1837 (1999). (Pubitemid 129308723)
2. Zhang, S. Spin Hall effect in the presence of spin diffusion. Phys. Rev. Lett. 85, 393-396 (2000).
3. Kato, Y. K., Myers, R. C., Gossard, A. C. & Awschalom, D. D. Observation of the spin Hall effect in semiconductors. Science 306, 1910-1913 (2004). (Pubitemid 39627849)
4. Wunderlich, J., Kaestner, B., Sinova, J. & Jungwirth, T. Experimental observation of the spin-Hall effect in a two-dimensional spin-orbit coupled semiconductor system. Phys. Rev. Lett. 94, 047204 (2005).
5. Valenzuela, S. O. & Tinkham, M. Direct electronic measurement of the spin Hall effect. Nature 442, 176-179 (2006). (Pubitemid 44086560)
6. Saitoh, E., Ueda, M., Miyajima, H. & Tatara, G. Conversion of spin current into charge current at room temperature: inverse spin-Hall effect. Appl. Phys. Lett. 88, 182509 (2006).
7. Kimura, T., Otani, Y., Sato, T., Takahashi, S. & Maekawa, S. Room-temperature reversible spin Hall effect. Phys. Rev. Lett. 98, 156601 (2007).
8. Morota, M. et al. Indication of intrinsic spin Hall effect in 4d and 5d transition metals. Phys. Rev. B 83, 174405 (2011).
9. Mosendz, O. et al. Detection and quantification of inverse spin Hall effect from spin pumping in permalloy/normal metal bilayers. Phys. Rev. B 82, 214403 (2010).
10. Ando, K. et al. Electric manipulation of spin relaxation using the spin Hall effect. Phys. Rev. Lett. 101, 036601 (2008).
11. Ando, K. & Saitoh, E. Inverse spin-Hall effect in palladium at room temperature. J. Appl. Phys. 108, 113925 (2010).
12. Seki, T. et al. Giant spin Hall effect in perpendicularly spin-polarized FePt/Au devices. Nat. Mater. 7, 125-129 (2008). (Pubitemid 351161342)
13. Mihajlovic?, G., Pearson, J., Garcia, M., Bader, S. & Hoffmann, A. Negative nonlocal resistance in mesoscopic gold Hall bars: absence of the giant spin Hall effect. Phys. Rev. Lett. 103, 166601 (2009).
14. Liu, L., Moriyama, T., Ralph, D. & Buhrman, R. Spin-torque ferromagnetic resonance induced by the spin Hall effect. Phys. Rev. Lett. 106, 036601 (2011).
15. Pai, C.-F. et al. Spin transfer torque devices utilizing the giant spin Hall effect of tungsten. Appl. Phys. Lett. 101, 122404 (2012).
16. Liu, L. et al. Spin-torque switching with the giant spin Hall effect of tantalum. Science 336, 555-558 (2012).
17. Niimi, Y. et al. Extrinsic spin Hall effect induced by iridium impurities in copper. Phys. Rev. Lett. 106, 126601 (2011).
18. Niimi, Y. et al. Giant spin Hall effect induced by skew scattering from bismuth impurities inside thin film CuBi alloys. Phys. Rev. Lett. 109, 156602 (2012).
19. Chazalviel, J.N. & Solomon, I. Experimental evidence of the anomalous Hall effect in a nonmagnetic semiconductor. Phys. Rev. Lett. 29, 1676-1679 (1972).
20. Chazalviel, J.N. Spin-dependent Hall effect in semiconductors. Phys. Rev. B 11, 3918-3934 (1975).
21. D'yakonov, M. I. & Perel', V. I. Possibilty of orienting electron spins with current. Sov. Phys. JETP Lett. 13, 467-469 (1971).
22. Bakun, A. A., Zakharchenya, B. P., Rogachev, A. A., Tkachuk, M. N. & Flesher, V. G. Observation of a surface photocurrent caused by optical orientation of electons in a semiconductor. Sov. Phys. JETP Lett. 40, 1293-1295 (1984).
23. Ando, K. & Saitoh, E. Observation of the inverse spin Hall effect in silicon. Nat. Comm. 3, 629 (2012).
24. Vila, L., Kimura, T. & Otani, Y. Evolution of the spin Hall effect in Pt nanowires: size and temperature effects. Phys. Rev. Lett. 99, 226604 (2007).
25. Gu, B. et al. Surface-assisted spin Hall effect in Au films with Pt impurities. Phys. Rev. Lett. 105, 216401 (2010).
26. Fert, A. & Levy, P. Spin Hall effect induced by resonant scattering on impurities in metals. Phys. Rev. Lett. 106, 157208 (2011).
27. Gradhand, M. et al. Perfect alloys for spin Hall current-induced magnetization switching. SPIN 2, 1250010 (2012).
28. Kim, B. J. et al. Phase-sensitive observation of a spin-orbital Mott state in Sr2IrO4. Science 323, 1329-1332 (2009).
29. Okabe, H. et al. Ba2IrO4: a spin-orbit Mott insulating quasi-two-dimensional antiferromagnet. Phys. Rev. B 83, 155118 (2011).
30. Ohgushi, K. et al. Resonant X-ray diffraction study of strongly spin-orbitcoupled Mott insulator CaIrO3. Phys. Rev. Lett. 110, 217212 (2013).
31. Kuriyama, H. et al. Epitaxially stabilized iridium spinel oxide without cations in the tetrahedral site. Appl. Phys. Lett. 96, 182103 (2010).
32. Ryden, W., Lawson, A. & Sartain, C. Electrical transport properties of IrO2 and RuO2. Phys. Rev. B 1, 1494-1500 (1970).
33. Mattheiss, L. Electronic structure of RuO2, OsO2, and IrO2. Phys. Rev. B 13, 2433-2450 (1976).
34. Hirata, Y. et al. Complex orbital state stabilized by strong spin-orbit coupling in a metallic iridium oxide IrO2. Phys. Rev. B 87, 161111 (2013).
35. Idzuchi, H., Fukuma, Y., Wang, L. & Otani, Y. Spin relaxation mechanism in silver nanowires covered with MgO protection layer. Appl. Phys. Lett. 101, 022415 (2012).
36. Fukuma, Y. et al. Giant enhancement of spin accumulation and long-distance spin precession in metallic lateral spin valves. Nat. Mater. 10, 527-531 (2011).
37. Abe, Y., Hasegawa, T., Kawamura, M. & Sasaki, K. Characterization of Ag oxide thin films prepared by reactive RF sputtering. Vacuum 76, 1-6 (2004).
38. Valenzuela, S. O. & Tinkham, M. Spin-polarized tunneling in roomtemperature mesoscopic spin valves. Appl. Phys. Lett. 85, 5914 (2004).
39. Idzuchi, H., Fukuma, Y., Wang, L. & Otani, Y. Spin diffusion characteristics in magnesium nanowires. Appl. Phys. Express 3, 063002 (2010).
40. Althammer, M., Karrer-Muller, E.-M., Goennenwein, S. T. B., Opel, M. & Gross, R. Spin transport and spin dephasing in zinc oxide. Appl. Phys. Lett. 101, 082404 (2012).
41. Suzuki, A., Matsushita, T., Wada, N., Sakamoto, Y. & Okuda, M. Transparent conducting Al-doped ZnO thin films prepared by pulsed laser deposition. Jpn J. Appl. Phys. 35, L56-L59 (1996).
42. Shitade, A. et al. Quantum spin Hall effect in a transition metal oxide Na2IrO3. Phys. Rev. Lett. 102, 256403 (2009).
43. Wan, X., Turner, A. M., Vishwanath, A. & Savrasov, S. Y. Topological semimetal and Fermi-arc surface states in the electronic structure of pyrochlore iridates. Phys. Rev. B 83, 205101 (2011).
44. Jackeli, G. & Khaliullin, G. Mott insulators in the strong spin-orbit coupling limit: from Heisenberg to a quantum compass and Kitaev models. Phys. Rev. Lett. 102, 017205 (2009). Technology Technology Technology