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Volumn 88, Issue 20, 2013, Pages

Erratum: Charge-carrier-induced frequency renormalization, damping, and heating of vibrational modes in nanoscale junctions (Physical Review B (2013) 88 (201405(R)) DOI:10.1103/PhysRevB.88.201405);Charge-carrier-induced frequency renormalization, damping, and heating of vibrational modes in nanoscale junctions

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EID: 84890541375     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.88.239902     Document Type: Erratum
Times cited : (44)

References (45)
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    • See Supplemental Material at
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    • In spite of the nonconservative nature of the first Born approximation applied here, it is expected to give a quantitative description of vibrational heating in the regime of weak el-vib interaction (Ref.).
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    • Our choice of parameters for the OPV3 junction corresponds to a zero-bias conductance of G∼0.1G0 (G0=2e2/h), which is slightly larger than the conductance values reported in Ref..
    • Our choice of parameters for the OPV3 junction corresponds to a zero-bias conductance of G ∼ 0.1 G 0 (G 0 = 2 e 2 / h), which is slightly larger than the conductance values reported in Ref..
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    • Note that the cross section for Raman scattering is mode dependent, implying that not all spectral lines show up in Raman spectroscopy.
    • Note that the cross section for Raman scattering is mode dependent, implying that not all spectral lines show up in Raman spectroscopy.


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