ESD performance of high mobility SiGe quantum well bulk finFET diodes and pMOS devices

Electrical Overstress/Electrostatic Discharge Symposium Proceedings

Volumn , Issue , 2013, Pages

  Linten, Dimitri ^a   Hellings, Geert ^a   Chen, Shih Hung ^a   Zografos, Odysseas ^b   Scholz, Mirko ^a   Veloso, Anabela ^a   Groeseneken, Guido ^c  

^a IMEC   (Belgium)

^b GRENOBLE INSTITUTE OF TECHNOLOGY   (France)

^c UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

BULK FINFET; DEVICE ARCHITECTURES; ESD PERFORMANCE; ESD ROBUSTNESS; HIGH MOBILITY; HIGH MOBILITY CHANNELS; PMOS DEVICES; SIGE QUANTUM WELLS;

ELECTROSTATIC DEVICES;

ELECTROSTATIC DISCHARGE;

EID: 84890539216     PISSN: 07395159     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

1. J T. Skotnicki IEDM 2010 short course.
2. G. Hellings et al., "High performance 70-nm germanium pMOSFETs with boron LDD implants," IEEE Electron Device Letters, vol. 30, no. 1, pp. 88-90, Jan. 2009
3. D. tremouiles et al., "Understanding the Optimization of Sub-45nm FinFET Devices for ESD Applications", EOS/ESD Symp., 2007.
4. A. Griffoni, et al., "Next Generation Bulk FinFET Devices and Their Benefits for ESD Robustness"EOS/ESD Symp., 2009, pp. 59-68.
5. G. Hellings et al., "ESD Characterization of High Mobility SiGe Quantum Well and Ge Devices for Future CMOS Scaling", EOSESD symposium 2012.
6. M. Togo, et al. "Phosphorus doped SiC source drain and SiGe channel for scaled bulk FinFETs" IEDM 2012.
7. A Veleso, et al " "Process control & integration options of RMG technology for aggressively scaled devices," VLSI Technology, 2012 Symposium on, vol., no., pp.33-34, 12-14 June 2012.
8. Hellings, G.; Witters, L.; Krom, R.; Mitard, J.; Hikavyy, A.; Loo, R.; Schulze, A.; Eneman, G.; Kerner, C.; Franco, J.; Chiarella, T.; Takeoka, S.; Joshua Tseng; Wei-e Wang; Vandervorst, W.; Absil, P.; Biesemans, S.; Heyns, M.; de Meyer, K.; Meuris, M.; Hoffmann, T., "Implant-Free SiGe Quantum Well pFET: A novel, highly scalable and low thermal budget device, featuring raised source/drain and high-mobility channel," Electron Devices Meeting (IEDM), 2010 IEEE International, vol., no., pp.10.4.1-10.4.4, 6-8 Dec. 2010.
9. S. Thijs, et al.,"On Gated Diodes for ESD Protection in Bulk FinFET CMOS Technology", EOSESD symposium 2011.