Electrical properties of CIGS/Mo junctions as a function of MoSe 2 orientation and Na doping

Progress in Photovoltaics: Research and Applications

Volumn 22, Issue 1, 2014, Pages 90-96

  Yoon, Ju Heon ^a,b   Kim, Jun Ho ^b   Kim, Won Mok ^a   Park, Jong Keuk ^a   Baik, Young Joon ^a   Seong, Tae Yeon ^b   Jeong, Jeung Hyun ^a  

^a Korea Institute of Science and Technology   (South Korea)

^b Korea University   (South Korea)

Author keywords

CIGS thin film solar cells; CIGS Mo contact resistance; inverse transmission line method; MoSe2 orientation; Na doping

Indexed keywords

BARRIER HEIGHTS; LOWER TEMPERATURES; MEASUREMENTS OF; NA DOPING; NORMAL ORIENTATION; THIN-FILM SOLAR CELLS; TRANSMISSION LINE METHODS; TWO-FOLD REDUCTION;

CONTACT RESISTANCE; COPPER; ELECTRIC LINES; ELECTRIC PROPERTIES; GALLIUM; SEMICONDUCTING SELENIUM COMPOUNDS; TRANSMISSION LINE THEORY;

SODIUM;

EID: 84890447649     PISSN: 10627995     EISSN: 1099159X     Source Type: Journal    
DOI: 10.1002/pip.2377     Document Type: Article

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