Highly ordered GaN-based nanowire arrays grown on patterned (100) silicon and their optical properties

Chemical Communications

Volumn 50, Issue 6, 2014, Pages 682-684

  Wang, Xingfu ^a   Tong, Jinhui ^a   Chen, Xin ^a   Zhao, Bijun ^a   Ren, Zhiwei ^a   Li, Danwei ^a   Zhuo, Xiangjing ^a   Zhang, Jun ^a   Yi, Hanxiang ^a   Liu, Chao ^a   Fang, Fang ^b   Li, Shuti ^a  

^a SOUTH CHINA NORMAL UNIVERSITY   (China)

^b Gold Medal Analytical and Testing Group   (China)

Author keywords

[No Author keywords available]

Indexed keywords

NANOWIRE; SILICON;

ARTICLE; DENSITY; ELECTRON DIFFRACTION; EXCITATION; GROWTH; LASER; NANOARRAY; PHOTOLUMINESCENCE; REFRACTION INDEX; ROOM TEMPERATURE; SEMICONDUCTOR; SPECTRAL SENSITIVITY;

EID: 84890355633     PISSN: 13597345     EISSN: 1364548X     Source Type: Journal    
DOI: 10.1039/c3cc47239f     Document Type: Article

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