Formation of the buffer layer of Silicon Suboxides SiOx in the Si/SiO2 low-dimensional heterosystem after Si+ Ion implantation: Si L2, 3 X-Ray emission spectra

Physics of the Solid State

Volumn 51, Issue 11, 2009, Pages 2241-2246

  Zatsepin, D A ^a,b   Panin, E A ^b   Kaschieva, S ^c   Fitting, H J ^d   Shamin, S N ^a  

^a INSTITUTE OF METAL PHYSICS   (Russian Federation)

^b URAL FEDERAL UNIVERSITY   (Russian Federation)

^c INSTITUTE OF SOLID STATE PHYSICS   (Bulgaria)

^d UNIVERSITY OF ROSTOCK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84890317026     PISSN: 10637834     EISSN: None     Source Type: Journal    
DOI: 10.1134/S1063783409110079     Document Type: Article

References (25)

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