First-principles study on electronic structure of Si/SiO2 interface-Effect of interface defects on local charge density

Science and Technology of Advanced Materials

Volumn 8, Issue 3, 2007, Pages 204-207

  Kutsuki, Katsuhiro ^a   Ono, Tomoya ^a   Hirose, Kikuji ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

First principles calculation; Leakage current; SiO2

Indexed keywords

CHARGE DENSITY; DENSITY FUNCTIONAL THEORY; ELECTRIC FIELDS; FINITE DIFFERENCE METHOD; LEAKAGE CURRENTS; SILICON COMPOUNDS;

FIRST-PRINCIPLES CALCULATION; INTERFACE DEFECTS; LOCAL CHARGE DENSITY; ZERO BIAS;

ELECTRONIC STRUCTURE;

EID: 34249063889     PISSN: 14686996     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.stam.2007.01.008     Document Type: Article

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