Physical and chemical degradation behavior of sputtered aluminum doped zinc oxide layers for Cu(In,Ga)Se2 solar cells

Thin Solid Films

Volumn 550, Issue , 2014, Pages 530-540

  Theelen, Mirjam ^a,b   Boumans, Twan ^a   Stegeman, Felix ^a   Colberts, Fallon ^a   Illiberi, Andrea ^a   Van Berkum, Jurgen ^c   Barreau, Nicolas ^d   Vroon, Zeger ^a   Zeman, Miro ^b  

^a TNO   (Netherlands)

^b DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^c PHILIPS RESEARCH LABORATORIES   (Germany)

^d UNIVERSITÉ DE NANTES   (France)

Author keywords

Aluminum doped zinc oxide; Copper indium gallium selenide; Damp heat; Degradation; Grain boundaries; Sputtering; Zinc hydroxide

Indexed keywords

ALUMINUM OXIDE; BOROSILICATE GLASS; CARRIER CONCENTRATION; CHLORINE COMPOUNDS; COPPER COMPOUNDS; CRYSTAL STRUCTURE; DEGRADATION; DEPTH PROFILING; GRAIN BOUNDARIES; HALL MOBILITY; HOLE MOBILITY; II-VI SEMICONDUCTORS; INDIUM COMPOUNDS; LAYERED SEMICONDUCTORS; OPTICAL DATA PROCESSING; OPTICAL FILMS; OPTICAL VARIABLES MEASUREMENT; OXIDE MINERALS; SOLAR CELLS; SPUTTERING; SULFUR COMPOUNDS; TRANSPARENT CONDUCTING OXIDES; ZINC OXIDE;

ALUMINUM DOPED ZINC OXIDE LAYERS; ALUMINUM DOPED ZINC OXIDES (ZNO:AL); ALUMINUM-DOPED ZINC OXIDE; DAMP HEAT; ELECTRON TRAPPING SITES; GALLIUM SELENIDES; SPACE CHARGE REGIONS; ZINC HYDROXIDE;

GALLIUM COMPOUNDS;

EID: 84890312315     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2013.10.149     Document Type: Article

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