Stimulated N-doping of reduced graphene oxide on GaN under excimer laser reduction process

Materials Letters

Volumn 116, Issue , 2014, Pages 412-415

  Ryu, Beo Deul ^a   Han, Nam ^a   Han, Min ^a   Chandramohan, S ^a   Park, Young Jae ^a   Ko, Kang Bok ^a   Park, Jong Bae ^b   Cuong, Tran Viet ^a,c   Hong, Chang Hee ^a  

^a Chonbuk National University   (South Korea)

^b Korea Basic Science Institute (KBSI)   (South Korea)

^c VIETNAM NATIONAL UNIVERSITY   (Viet Nam)

Author keywords

GaN; Graphene oxide; Laser reduction; N doping

Indexed keywords

C-N BOND FORMATIONS; GAN; GRAPHENE OXIDES; LASER-INDUCED DISSOCIATION; N-DOPING; REDUCED GRAPHENE OXIDES; REDUCTION PROCESS; SEMICONDUCTOR INTERFACES;

DOPING (ADDITIVES); EXCIMER LASERS; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; NITROGEN; SEMICONDUCTOR LASERS;

GRAPHENE;

EID: 84890185728     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matlet.2013.11.072     Document Type: Article

References (11)

1. C.N.R. Rao, A.K. Sood, K.S. Subrahmanyam, and A. Govindaraj Angew Chem Int Ed 48 2009 7752 7778
2. H. Bai, C. Li, and G. Shi Adv Mater 23 2011 1089 1115
3. Y. Zhu, S. Murali, W. Cai, X. Li, J.W. Suk, and J.R. Potts Adv Mater 22 2010 3906 3924
4. L. Huang, Y. Liu, L. Ji, Y. Xie, T. Wang, and W. Shi Carbon 49 2011 2431 2436
5. C. Petridis, Y.H. Lin, K. Savva, G. Eda, E. Kymakis, and T.D. Anthopoulos Appl Phys Lett 102 2013 093115
6. B. Zhang, L. Li, Z. Wang, S. Xie, Y. Zhang, and Y. Shen Mater Chem 22 2012 7775 7781
7. D. Wei, Y. Liu, Y. Wang, H. Zhang, L. Huang, and G. Yu Nano Lett 9 2009 1752 1758
8. U. Tetsuzo, I. Masahiro, and Y. Masaaki Jpn J Appl Phys 50 2011 041001
9. L.G. Cançado, K. Takai, T. Enoki, M. Endo, Y.A. Kim, and H. Mizusaki Appl Phys Lett 88 2006 163106
10. G. Eda, G. Fanchini, and M. Chhowalla Nat Nanotech 3 2008 270 274
11. Q. Yan, B. Huang, J. Yu, F. Zheng, J. Zng, and J. Wu Nano Lett 7 2007 1469 1473