The effect of Ga2Se3 doping ratios on structure, composition, and electrical properties of CuIn0.5 Ga 0.5Se2 absorber formed by thermal sintering

International Journal of Photoenergy

Volumn 2013, Issue , 2013, Pages

  Liu, Chung Ping ^a,b   Chang, Ming Wei ^a   Chuang, Chuan Lung ^a  

^a YUAN ZE UNIVERSITY   (Taiwan)

^b FU JEN CATHOLIC UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BINARY ALLOYS; CARRIER CONCENTRATION; COPPER ALLOYS; COPPER COMPOUNDS; GALLIUM COMPOUNDS; GLASS SUBSTRATES; INDIUM COMPOUNDS; LIME; PARTICLE SIZE; SELENIUM COMPOUNDS; SEMICONDUCTOR DOPING; SINTERING; TEMPERATURE;

'DRY' [; AVERAGE PARTICLE SIZE; CHALCOPYRITES COMPOUNDS; COPPER INDIUM GALLIUM DISELENIDE; LOWS-TEMPERATURES; NON-VACUUM; SELENIZATION; SINTERING METHODS; SODA LIME GLASS SUBSTRATE; THERMAL SINTERING;

MILLING (MACHINING);

EID: 84890106616     PISSN: 1110662X     EISSN: 1687529X     Source Type: Journal    
DOI: 10.1155/2013/936364     Document Type: Article

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