Coupled atomistic 3D process/device simulation considering both line-edge roughness and random-discrete-dopant effects

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn 2003-January, Issue , 2003, Pages 99-102

  Hane, M ^a   Ikezawa, T ^a   Ezaki, T ^a  

^a NEC CORPORATION   (Japan)

Author keywords

Autocorrelation; Computational modeling; Data mining; Fluctuations; Fourier transforms; Ion implantation; Monte Carlo methods; MOSFETs; National electric code; Shape

Indexed keywords

AUTOCORRELATION; DATA MINING; DOPING (ADDITIVES); FOURIER TRANSFORMS; ION IMPLANTATION; MOSFET DEVICES; ROUGHNESS MEASUREMENT; SEMICONDUCTOR DEVICES;

COMPUTATIONAL MODEL; FLUCTUATIONS; MOSFETS; NATIONAL ELECTRIC CODE; SHAPE;

MONTE CARLO METHODS;

EID: 84890000002     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SISPAD.2003.1233647     Document Type: Conference Paper

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