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Volumn 103, Issue 23, 2013, Pages

Enhancing photoresponse by synergy of gate and illumination in electric double layer field effect transistors fabricated on n-ZnO

Author keywords

[No Author keywords available]

Indexed keywords

DEVICE CURRENTS; ELECTRIC DOUBLE LAYER; FIELD-EFFECT MOBILITIES; GATE BIAS; PHOTORESPONSES; POTENTIAL SCATTERING; ULTRA-VIOLET; UV ILLUMINATIONS;

EID: 84889834288     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4838656     Document Type: Article
Times cited : (20)

References (12)
  • 4
    • 84889776782 scopus 로고    scopus 로고
    • See supplementary material at E-APPLAB-103-062349 for preparation and characterization of thin films
    • See supplementary material at http://dx.doi.org/10.1063/1.4838656 E-APPLAB-103-062349 for preparation and characterization of thin films.
  • 8
    • 33747304485 scopus 로고    scopus 로고
    • 10.1002/smll.200600134
    • A. B. Djurišic and Y. H. Leung, Small 2, 944 (2006). 10.1002/smll.200600134
    • (2006) Small , vol.2 , pp. 944
    • Djurišic, A.B.1    Leung, Y.H.2
  • 10
    • 58149214244 scopus 로고    scopus 로고
    • 10.1088/0957-4484/19/44/445704
    • M. Ghosh and A. K. Raychaudhuri, Nanotechnology 19, 445704 (2008). 10.1088/0957-4484/19/44/445704
    • (2008) Nanotechnology , vol.19 , pp. 445704
    • Ghosh, M.1    Raychaudhuri, A.K.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.