Formation of Ga2O3 barrier layer in Cu(InGa)Se 2 superstrate devices with ZnO buffer layer

Materials Research Society Symposium Proceedings

Volumn 1538, Issue , 2013, Pages 67-72

  Larsen, Jes K ^a   Xin, Peipei ^a   Shafarman, William N ^a  

^a UNIVERSITY OF DELAWARE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER LAYERS; ELEVATED TEMPERATURE; JUNCTION FORMATION; SUBSTRATE DEPOSITION; SUPERSTRATES; ZNO; ZNO BUFFER LAYER;

BUFFER LAYERS; DEPOSITION; GALLIUM; PHOTOELECTRONS; SEMICONDUCTOR JUNCTIONS; TEMPERATURE; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDE;

GALLIUM ALLOYS;

EID: 84889678231     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/opl.2013.1007     Document Type: Conference Paper

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