SnO2:F with very high haze value and transmittance in near infrared wavelength for use as front transparent conductive oxide films in thin-film silicon solar cells

Materials Research Society Symposium Proceedings

Volumn 1536, Issue , 2013, Pages 63-69

  Isshiki, Masanobu ^a,b   Ishikawa, Yasuko ^a   Ikeda, Toru ^a   Oyama, Takuji ^a   Odaka, Hidefumi ^a   Sichanugrist, Porponth ^b   Konagai, Makoto ^b  

^a ASAHI GLASS CO LTD   (Japan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GLASS SUBSTRATES; HIGH TRANSMITTANCE; LIGHT-TRAPPING; NEAR-INFRARED WAVELENGTH; STACKED STRUCTURE; THIN-FILM SI SOLAR CELLS; THIN-FILM SILICON SOLAR CELLS; TRANSPARENT CONDUCTIVE OXIDE FILMS;

GLASS; OXIDE FILMS; SILICON SOLAR CELLS; SUBSTRATES;

CARRIER CONCENTRATION;

EID: 84889655164     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/opl.2013.744     Document Type: Conference Paper

References (7)

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6. M. Mizuhashi, Y. Gotoh, and K. Adachi: Jpn. J. Appl. Phys. 27 (1988) 2053.
7. K. Ellmer, in Handbook of Transparent Conductors, edited by D. S. Ginley (Springer, New York, 2010), Chap. 7.