|
Volumn 17, Issue 7, 2013, Pages 552-556
|
Evolution of interface configuration in sapphire single crystal growth via czochralski method
|
Author keywords
Bonding density; Chemical bonding theory; Czochralski method; Interface configuration; Sapphire
|
Indexed keywords
BONDING DENSITY;
C-AXIS DIRECTION;
CHEMICAL BONDING THEORY;
CHEMICAL BONDINGS;
GROWTH PROCESS;
INTERFACE CONFIGURATION;
SAPPHIRE CRYSTAL;
SAPPHIRE SINGLE CRYSTAL;
CHEMICAL BONDS;
CRYSTAL GROWTH FROM MELT;
SAPPHIRE;
|
EID: 84889594644
PISSN: 14328917
EISSN: 1433075X
Source Type: Journal
DOI: 10.1179/1433075X13Y.0000000102 Document Type: Article |
Times cited : (13)
|
References (27)
|