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Volumn 17, Issue 7, 2013, Pages 552-556

Evolution of interface configuration in sapphire single crystal growth via czochralski method

Author keywords

Bonding density; Chemical bonding theory; Czochralski method; Interface configuration; Sapphire

Indexed keywords

BONDING DENSITY; C-AXIS DIRECTION; CHEMICAL BONDING THEORY; CHEMICAL BONDINGS; GROWTH PROCESS; INTERFACE CONFIGURATION; SAPPHIRE CRYSTAL; SAPPHIRE SINGLE CRYSTAL;

EID: 84889594644     PISSN: 14328917     EISSN: 1433075X     Source Type: Journal    
DOI: 10.1179/1433075X13Y.0000000102     Document Type: Article
Times cited : (13)

References (27)
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.