Optical and electrical properties of N-doped ZnO heterojunction photodiode

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 57, Issue , 2014, Pages 113-117

  Huang, Hong ^a   Zhao, Qing ^a   Hong, Kunquan ^b,c   Xu, Qingyu ^b,c   Huang, Xiaoping ^a  

^a UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

^b SOUTHEAST UNIVERSITY   (China)

^c Southeast University   (China)

Author keywords

Electrical property; Heterojunction; Optical property; ZnO nanowire

Indexed keywords

CONTROLLED TRANSPORT; FORWARD BIAS VOLTAGE; HETEROJUNCTION DEVICES; HETEROJUNCTION PHOTODIODES; NANOSCALE ELECTRONICS; OPTICAL AND ELECTRICAL PROPERTIES; P-TYPE CONDUCTIVITY; ZNO NANOWIRES;

CHEMICAL VAPOR DEPOSITION; DOPING (ADDITIVES); GALLIUM NITRIDE; HETEROJUNCTIONS; NANOWIRES; OPTICAL PROPERTIES; OPTICAL PUMPING; PHOTODIODES; TRANSPORT PROPERTIES; ZINC OXIDE; ZINC SULFIDE;

ELECTRIC PROPERTIES;

EID: 84889007420     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2013.10.038     Document Type: Article

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