Quantum dot Ge/TiO2 heterojunction photoconductor fabrication and performance

Applied Physics Letters

Volumn 103, Issue 22, 2013, Pages

  Church, Carena P ^a   Muthuswamy, Elayaraja ^b   Zhai, Guangmei ^c   Kauzlarich, Susan M ^b   Carter, Sue A ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c TAIYUAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORBER LAYERS; BACK CONTACT; DEVICE DESIGN; GE QUANTUM DOT; ON-OFF RATIO; ORDERS OF MAGNITUDE; PHOTOCURRENT ENHANCEMENT; PHOTOVOLTAICS;

FABRICATION; GERMANIUM; HETEROJUNCTIONS; SEMICONDUCTOR QUANTUM DOTS;

PHOTOCURRENTS;

EID: 84888630738     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4826916     Document Type: Article

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