Epitaxial growth of InGaAs on MgAl2O4 spinel for one-sun photovoltaics

Journal of Crystal Growth

Volumn 363, Issue , 2013, Pages 40-43

  Rance, W L ^a   Norman, A G ^a   Ptak, A J ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

A1. Planar defects; A1. Substrates; A3. Molecular beam epitaxy; B2. Semiconducting III V materials; B3. Solar cells

Indexed keywords

CARRIER MOBILITY; EPITAXIAL GROWTH; GALLIUM ARSENIDE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM; SOLAR CELLS; SOLAR POWER GENERATION; TRANSMISSION ELECTRON MICROSCOPY;

COINCIDENT SITE LATTICES; CROSS SECTIONAL TRANSMISSION ELECTRON MICROSCOPY; ELEVATED TEMPERATURE; GAAS SUBSTRATES; PHOTO-VOLTAIC EFFICIENCY; PLANAR DEFECT; SEMI CONDUCTING III-V MATERIALS; THREADING DISLOCATION;

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;

EID: 84888346293     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2012.09.037     Document Type: Article

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