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Volumn 66, Issue 16, 2002, Pages 1-4

Scanning tunneling microscopy of defect states in the semiconductor (formula presented)

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EID: 84888329252     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.66.161306     Document Type: Article
Times cited : (3)

References (18)
  • 1
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    • 0000636414 scopus 로고    scopus 로고
    • Although LDA approximation usually underestimates the semiconducting gap value, it has been rather successful in application to chalcogenide semiconductors. See
    • Although LDA approximation usually underestimates the semiconducting gap value, it has been rather successful in application to chalcogenide semiconductors. See, e.g., P. Larson, S.D. Mahanti, and M.G. Kanatzidis, Phys. Rev. B 61, 8162 (2000).
    • (2000) Phys. Rev. B , vol.61 , pp. 8162
    • Larson, P.1    Mahanti, S.D.2    Kanatzidis, M.G.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.