Electrochemical Mechanical Planarization (eCMP) of copper overburden

2006 Proceedings - 11th International Chemical-Mechanical Planarization for ULSI Multilevel Interconnection Conference, CMP-MIC 2006

Volumn , Issue , 2006, Pages 19-26

  Aksu, Serdar ^a   Emesh, Ismail ^a   Başol, Biilent ^a  

^a ASM NuTool Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROCHEMICAL MECHANICAL PLANARIZATION; ELECTROPLATING PROCESS; INTEGRATED SYSTEMS; PLANARIZATION; PLANARIZATION EFFICIENCIES; PLANARIZATION MECHANISM; TECHNICAL REQUIREMENT; TECHNOLOGY NODES;

CHEMICAL MECHANICAL POLISHING;

COPPER;

EID: 84888209610     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. B. Basol, et al, "Characterization of Cu Layers Grown by ECMD,", Microelectronic Engineering, v. 64, p. 43 (2002).
2. T. Mourier, et al, "ECMD and Reverse Linear Planarization of Cu for 45 nm Node ULK Integration,", Conf. Proc, AMC 2004, p. 597.
3. B. Basol, "Mechanically Induced Superfilling of Low Aspect Ratio Cavities in an ECMD Process,", J. Electrochem. Soc, v. 151, p. C765 (2004).
4. C.H. Seah, et al, "Impact of Electroplated Copper Thickness on Copper CMP and Cu/Coral BEOL Integration,", Microelectronic Engineering, v. 81, p. 66 (2005).
5. S. Aksu and F. M. Doyle, "The Role of Glycine in the Chemical Mechanical Planarization of Copper,", J. Electrochem. Soc, v. 149, p. G352 (2002).