Octagonal defects as the source of gap states in graphene semiconducting structures

Acta Physica Polonica A

Volumn 124, Issue 5, 2013, Pages 777-780

  Pelc, M ^a   Jaskolski W ^a   Ayuela, A ^b   Chico, L ^c  

^a NICOLAUS COPERNICUS UNIVERSITY   (Poland)

^b CENTRO MIXTO CSIC UPV EHU   (Spain)

^c INSTITUTO DE CIENCIA DE MATERIALES DE MADRID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON RINGS; DIVACANCIES; DONOR STATE; GRAPHENE NANORIBBONS; LOCAL DEFECTS; SEMICONDUCTING STRUCTURES; TOPOLOGICAL DEFECT; ZERO ENERGIES;

GRAPHENE;

DEFECTS;

EID: 84887978025     PISSN: 05874246     EISSN: 1898794X     Source Type: Journal    
DOI: 10.12693/APhysPolA.124.777     Document Type: Article

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