Photocurrent limit in nanowires

Optics Letters

Volumn 38, Issue 22, 2013, Pages 4698-4700

  Ullrich, Bruno ^a   Xi, Haowen ^b  

^a INSTITUTO DE CIENCIAS FÍSICAS   (Mexico)

^b BOWLING GREEN STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FIT PARAMETERS; IMPURITY CONCENTRATION; LIGHT INTENSITY; LIMITING EFFECTS; SQUARE ROOTS;

OPTICS; OPTOELECTRONIC DEVICES;

NANOWIRES;

EID: 84887945597     PISSN: 01469592     EISSN: 15394794     Source Type: Journal    
DOI: 10.1364/OL.38.004698     Document Type: Article

References (17)

1. C. Bouchenaki, B. Ullrich, J. P. Zielinger, H. N. Cong, and P. Chartier, J. Opt. Soc. Am. B 8, 691 (1991).
2. K. P. Acharya and B. Ullrich, Proc. SPIE 6890, 68900Q (2008).
3. T. S. Moss, Photoconductivity in the Elements (Academic, 1952).
4. T. S. Moss, Optical Properties of Semi-Conductors (Academic, 1959).
5. R. Graham, C. Miller, E. Oh, and D. Yu, Nano Lett., 11, 717 (2011).
6. H. Kind, H. Yan, B. Messer, M. Law, and P. Yang, Adv. Mat. 14, 158 (2002).
7. Space-charge limited photocurrent scales with I3/4 in; see V. D. Mihailetchi, J. Wildeman, and P. W. M. Blom, Phys. Rev. Lett. 94, 126602 (2005), and references therein.
8. H. Pick, Ann. Phys. 438, 255 (1948).
9. It was shown in Ref. [3] that Eq. (1) holds for n-and p-type semiconductors (in the original work called excess conductor and defect conductor); i.e., M refers to the density of either ionized donors or acceptors.
10. R. N. Hall, Proc. IEE - Part B 106, 923 (1959).
11. The PbS nanowires referred to in this work are not greatly influenced by surface trap states; see Ref. [5], and the follow-up work by Y. Yang, J. Li, H. Wu, E. Oh, and D. Yu, Nano Lett. 12, 5890 (2012). Therefore, the M value found is a fair measure of the impurity concentration.
12. When the IPC data are plotted versus the incident laser power, as in Fig. 3, the slope parameter ó becomes á/-AhíinBM2- with the unit 1/W. The symbol A stands for the area of the laser spot.
13. In Ref. [6] no information was provided about the impurity concentration in the sample. We noticed, however, that the reported M∼6 × 1017 cm3 for ZnO nanowires by H. Oh, J.-J. Kim, J.-O. Lee, and S. S. Kim, J. Korean Phys. Soc. 58, 291 (2011), is in good agreement with our fit result. We stress, however, that we do not have specifics about the presence of surface traps in the samples used in Ref. [6], and, therefore, the actual M number can differ from our finding.
14. M. D. Tabak and P. J. Warter, Jr., Phys. Rev. 148, 982 (1966).
15. B. Ullrich and H. Xi, Opt. Lett. 35, 3910 (2010).
16. M. Bleicher, Halbleiter-Optoelektronik (Huethig, 1985).
17. Z. R. Khan, M. S. Khan, M. Zulfequar, and M. S. Khan, Mat. Sci. Appl. 2, 340 (2011).