Led structures grown on 200 mm diameter sapphire and silicon substrates

2010 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2010

Volumn , Issue , 2010, Pages

  Schreiner, R ^a   Boyd, A R ^a   Rockenfeller, O ^a   Kaeppeler, J ^a   Schineller, B ^a   Heuken, M ^a  

^a AIXTRON AG   (Germany)

Author keywords

Argus; CCS; Crius; GaN; GaN on silicon; MOCVD

Indexed keywords

ARGUS; CCS; CRIUS; GAN; GAN ON SILICON;

GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON; SILICON WAFERS;

SAPPHIRE;

EID: 84887388106     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. A.R. Boyd, et al., Phys. Status Solidi, Vol. 6 No S2, pp1045-1048, 2009.
2. D. Zhu, et al., Proc. of SPIE Vol. 7231 723118, 2009.
3. A. Alam, et al., Presented at ICNS-8, 2009.
4. A.R. Boyd et al., Presented at ICNS-8, 2009.