Flexible and twistable non-volatile memory cell array with all-organic one diode-one resistor architecture

Nature Communications

Volumn 4, Issue , 2013, Pages

  Ji, Yongsung ^a,b   Zeigler, David F ^c   Lee, Dong Su ^a   Choi, Hyejung ^d   Jen, Alex K Y ^c   Ko, Heung Cho ^b   Kim, Tae Wook ^a  

^a Korea Institute of Science and Technology   (South Korea)

^b Gwangju Institute of Science and Technology (GIST)   (South Korea)

^c UNIVERSITY OF WASHINGTON   (United States)

^d Hynix Semiconductor Inc   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ARRAY; CELL ORGANELLE; ELECTRICAL PROPERTY; MEMORY; SUBSTRATE; VOLATILE SUBSTANCE;

ARTICLE; BENDING; CROSS LINKING; CYTOARCHITECTURE; DIODE; ELECTRIC POTENTIAL; INFORMATION PROCESSING DEVICE; MEMORY CELL; MEMORY CELL ARRAY; MICROTECHNOLOGY; ONE DIODE ONE RESISTOR; PHYSICAL PARAMETERS; PHYSICAL STRESS; ULTRAVIOLET RADIATION;

EID: 84887264103     PISSN: None     EISSN: 20411723     Source Type: Journal    
DOI: 10.1038/ncomms3707     Document Type: Article

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