-
1
-
-
33947651709
-
10-Gb/s InGaAs p-i-n photodiodes with wide spectral range and enhanced visible spectral response
-
Mar. 1
-
Y. H. Huang, C. C. Yang, T. C. Peng, et al., "10-Gb/s InGaAs p-i-n photodiodes with wide spectral range and enhanced visible spectral response, " IEEE Photon. Technol. Lett., vol. 19, no. 5, pp. 339-341, Mar. 1, 2007.
-
(2007)
IEEE Photon. Technol. Lett.
, vol.19
, Issue.5
, pp. 339-341
-
-
Huang, Y.H.1
Yang, C.C.2
Peng, T.C.3
-
2
-
-
0025383577
-
Reliability of mesa and planar InGaAs PIN photodiodes
-
C. P. Skrimshire, J. R. Farr, D. F. Sloan, et al., "Reliability of mesa and planar InGaAs PIN photodiodes, " IEE Proc. J, vol. 137, no. 1, pp. 74-78, Feb. 1990. (Pubitemid 20648558)
-
(1990)
IEE proceedings. Part J, Optoelectronics
, vol.137
, Issue.1
, pp. 74-78
-
-
Skrimshire, C.P.1
Farr, J.R.2
Sloan, D.F.3
Robertson, M.J.4
Putland, P.A.5
Stokoe, J.C.D.6
Sutherland, R.R.7
-
3
-
-
0025430773
-
An InGaAs-InP position-sensing photodetector
-
May
-
P. Maigne, J. A. Beraldin, T. M. Vanderwel, et al., "An InGaAs-InP position-sensing photodetector, " IEEE J. Quantum Electron., vol. 26, no. 5, pp. 820-823, May 1990.
-
(1990)
IEEE J. Quantum Electron.
, vol.26
, Issue.5
, pp. 820-823
-
-
Maigne, P.1
Beraldin, J.A.2
Vanderwel, T.M.3
-
4
-
-
84887248983
-
Improved quantum efficiency of InGaAs/InP photodetectors using Ti/Au-SiO2 phase-matched-layer reflector
-
J. Yuan, B. Chen, and A. L. Holmes, "Improved quantum efficiency of InGaAs/InP photodetectors using Ti/Au-SiO2 phase-matched-layer reflector, " Electron. Lett., vol. 48, no. 19, pp. 1230-1231, 2012.
-
(2012)
Electron. Lett.
, vol.48
, Issue.19
, pp. 1230-1231
-
-
Yuan, J.1
Chen, B.2
Holmes, A.L.3
-
5
-
-
84867290925
-
Natural lithography nanosphere texturing as antireflective layer on InP-based pin photodiodes
-
B. Chen, Q. Zhou, D. C. McIntosh, et al., "Natural lithography nanosphere texturing as antireflective layer on InP-based pin photodiodes, " Electron. Lett., vol. 48, no. 21, pp. 1340-1341, 2012.
-
(2012)
Electron. Lett.
, vol.48
, Issue.21
, pp. 1340-1341
-
-
Chen, B.1
Zhou, Q.2
McIntosh, D.C.3
-
6
-
-
42149160078
-
GaAs0.5Sb0.5 lattice matched to InP for 1.55? Photo-detection
-
M. S. Park and J. H. Jang, "GaAs0.5Sb0.5 lattice matched to InP for 1.55 ?m photo-detection, " Electron. Lett., vol. 44, no. 8, pp. 549-550, 2008.
-
(2008)
Electron. Lett.
, vol.44
, Issue.8
, pp. 549-550
-
-
Park, M.S.1
Jang, J.H.2
-
7
-
-
75649140552
-
Atomic layer deposition: An overview
-
S. M. George, "Atomic layer deposition: An overview, " Chem. Rev., vol. 101, no. 1, pp. 111-131, 2010.
-
(2010)
Chem. Rev.
, vol.101
, Issue.1
, pp. 111-131
-
-
George, S.M.1
-
8
-
-
84887259414
-
Effects of oxygen plasma posttreatment on Ga-doped ZnO films grown by thermal-mode ALD
-
Y. L. Lee, S. F. Chen, C. L. Ho, et al., "Effects of oxygen plasma posttreatment on Ga-doped ZnO films grown by thermal-mode ALD, " ECS J. Solid State Sci. Technol., vol. 2, no. 7, pp. P316-P320, 2013.
-
(2013)
ECS J. Solid State Sci. Technol.
, vol.2
, Issue.7
-
-
Lee, Y.L.1
Chen, S.F.2
Ho, C.L.3
-
9
-
-
84887252233
-
The sandwich structure of Ga-doped ZnO thin films grown via H2O-, O2-, and O3-based ALD
-
Y. L. Lee, T. H. Huang, C. L. Ho, et al., "The sandwich structure of Ga-doped ZnO thin films grown via H2O-, O2-, and O3-based ALD, " ECS J. Solid State Sci. Technol., vol. 2, no. 9, pp. Q182-Q186, 2013.
-
(2013)
ECS J. Solid State Sci. Technol.
, vol.2
, Issue.9
-
-
Lee, Y.L.1
Huang, T.H.2
Ho, C.L.3
-
10
-
-
70349508767
-
Low dark current SWIR photodiode with InGaAs/GaAsSb type II quantum wells grown on InP substrate
-
Newport Beach, CA, USA, May
-
H. Inada, K. Miura, Y. Nagai, et al., "Low dark current SWIR photodiode with InGaAs/GaAsSb type II quantum wells grown on InP substrate, " in Proc. IEEE Int. Conf. Ind. Phos. Rel. Mater., Newport Beach, CA, USA, May 2009, pp. 149-152.
-
(2009)
In Proc. IEEE Int. Conf. Ind. Phos. Rel. Mater.
, pp. 149-152
-
-
Inada, H.1
Miura, K.2
Nagai, Y.3
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