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Volumn 34, Issue 11, 2013, Pages 1406-1408

Planar InGaAs p-i-n photodiodes with transparent-conducting-based antireflection and double-path reflector

Author keywords

Gallium doped zinc oxide (GZO); p i n photodiodes (PIN PDs); photosensitivity; plasma mode atomic layer deposition (PM ALD); quantum efficiency; responsivity

Indexed keywords

CUTOFF WAVELENGTHS; GALLIUMDOPED ZINC OXIDES (GZO); LATERAL RESISTANCE; OPTICAL REFLECTANCE; PIN PHOTODIODE; PLASMA-MODE ATOMIC LAYER DEPOSITION (PM-ALD); POSITION SENSITIVITY; RESPONSIVITY;

EID: 84887222793     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2013.2281830     Document Type: Article
Times cited : (10)

References (10)
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  • 4
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  • 8
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.