Tellurium-modified silicon nanowires with a large negative temperature coefficient of resistance

Applied Physics Letters

Volumn 101, Issue 13, 2012, Pages

  Yang, Li ^a,b   Lin, Haiyang ^b   Wang, Tao ^b   Ye, Shiyong ^a   Shao, Mingwang ^b   Lee, Shuit Tong ^b,c  

^a ANHUI NORMAL UNIVERSITY   (China)

^b SOOCHOW UNIVERSITY   (China)

^c CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

LINEAR RELATIONSHIPS; NEGATIVE TEMPERATURE COEFFICIENT OF RESISTANCES; SILICON NANOWIRES; TEMPERATURE DEPENDENT; THERMO-SENSITIVE MATERIALS;

NANOWIRES; NEGATIVE TEMPERATURE COEFFICIENT; TELLURIUM; TELLURIUM COMPOUNDS;

SILICON;

EID: 84886579617     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4757002     Document Type: Article

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