Strain effects to optimize thermoelectric properties of doped Bi 2O2Se via tran-blaha modified Becke-Johnson density functional theory

Journal of Physical Chemistry C

Volumn 117, Issue 41, 2013, Pages 21597-21602

  Guo, Donglin ^a   Hu, Chenguo ^a   Xi, Yi ^a   Zhang, Kaiyou ^a  

^a CHONGQING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BOLTZMANN TRANSPORT THEORY; ELECTRONIC BAND GAPS; IN-PLANE STRAINS; N-TYPE DOPING; STRAIN ENGINEERING; THERMO-ELECTRIC MATERIALS; THERMOELECTRIC FIGURE OF MERIT; THERMOELECTRIC PROPERTIES;

ELECTRIC POWER FACTOR; SEEBECK COEFFICIENT; STATISTICAL MECHANICS; THERMOELECTRIC EQUIPMENT; TRANSPORT PROPERTIES;

STRAIN;

EID: 84886079142     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp4080465     Document Type: Article

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