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Applied Physics Letters

Volumn 97, Issue 25, 2010, Pages

Electronic structure and thermoelectric properties of In32-x GexO48 (x=0, 1, 2, and 3) at low temperature

(2) Yan, Yu Li a Wang, Yuan Xu a

a HENAN UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

BOLTZMANN THEORY; LOW TEMPERATURES; THEORETICAL CALCULATIONS; THERMOELECTRIC MATERIAL; THERMOELECTRIC PERFORMANCE; THERMOELECTRIC POWER FACTORS; THERMOELECTRIC PROPERTIES; TRANSPORT COEFFICIENT;

ELECTRIC POWER FACTOR; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; GERMANIUM; INDIUM; TELLURIUM COMPOUNDS; THERMOELECTRIC EQUIPMENT; THERMOELECTRIC POWER;

DENSITY FUNCTIONAL THEORY;

EID: 78650732309 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3529489 Document Type: Article

Times cited : (9)

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