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Volumn 117, Issue 41, 2013, Pages 21577-21582

Encapsulation of Au nanoparticles on a silicon wafer during thermal oxidation

Author keywords

[No Author keywords available]

Indexed keywords

GAS ADSORPTION; GOLD; NANOPARTICLES; OXYGEN; SILICA; SILICON OXIDES; SILICON WAFERS; SIO2 NANOPARTICLES; SUBSTRATES; THERMOOXIDATION;

EID: 84886068428     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp4074043     Document Type: Article
Times cited : (12)

References (18)
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  • 2
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    • Ruemmele, J. A.; Hall, W. P.; Ruvuna, L. K.; Van Duyne, R. P. A Localized Surface Plasmon Resonance Imaging Instrument for Multiplexed Biosensing Anal. Chem. 2013, 85, 4560-4566
    • (2013) Anal. Chem. , vol.85 , pp. 4560-4566
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  • 9
    • 84881236523 scopus 로고    scopus 로고
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    • WSxM Program
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    • Werner, W.1
  • 11
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    • The Thickogram: A Method for Easy Film Thickness Measurement in XPS
    • Cumpson, R. The Thickogram: A Method for Easy Film Thickness Measurement in XPS Surf. Interface Anal. 2000, 29, 403-6
    • (2000) Surf. Interface Anal. , vol.29 , pp. 403-406
    • Cumpson, R.1
  • 13
    • 1642621158 scopus 로고
    • General Relationship for the Thermal Oxidation of Silicon
    • Deal, E.; Grove, A. S. General Relationship for the Thermal Oxidation of Silicon J. Appl. Phys. 1965, 36, 3770-8
    • (1965) J. Appl. Phys. , vol.36 , pp. 3770-3778
    • Deal, E.1    Grove, A.S.2
  • 15
    • 0022160993 scopus 로고
    • Silicon Dry Oxidation Kinetics at Low Temperature in the Nanometric Range
    • Massoud, H. Z.; Plummer, J. D.; Irene, E. A. Silicon Dry Oxidation Kinetics at Low Temperature in the Nanometric Range J. Electrochem. Soc. 1985, 132, 2685-2695
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  • 16
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    • Standard Enthalpy of Formation of Crystalline Au(III) Oxide
    • Ashcroft, S.; Schwartzmann, E. Standard Enthalpy of Formation of Crystalline Au(III) Oxide J. Chem. Soc., Faraday Trans. 1 1972, 68, 1360-1361
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    • Ashcroft, S.1    Schwartzmann, E.2
  • 17
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    • 2O: First Principles Investigation. C
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.