Strain-controlled interface engineering of binding and charge doping at metal-graphene contacts

Applied Physics Letters

Volumn 103, Issue 14, 2013, Pages

  Gong, Wenbin ^a,b   Zhang, Wei ^a,e   Ren, Cuilan ^a,e   Ke, Xuezhi ^c   Wang, Song ^a,b   Huai, Ping ^a,e   Zhang, Wenqing ^d   Zhu, Zhiyuan ^a,e  

^a SHANGHAI INSTITUTE OF APPLIED PHYSICS   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

^c EAST CHINA NORMAL UNIVERSITY   (China)

^d SHANGHAI INSTITUTE OF CERAMICS   (China)

^e INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; DENSITY FUNCTIONAL THEORY; GRAPHENE;

CHARGE DOPING; DIPOLE DIPOLE INTERACTIONS; GRAPHENE CONTACTS; INTERFACE ENGINEERING; STRAIN EFFECT; STRAIN-CONTROLLED; WEAK BINDING;

TENSILE STRAIN;

EID: 84885648939     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4823800     Document Type: Article

References (34)

1. P. Avouris, Nano Lett. 10, 4285 (2010). 10.1021/nl102824h
2. R. S. Singh, V. Nalla, W. Chen, W. Ji, and A. T. S. Wee, Appl. Phys. Lett. 100, 093116 (2012). 10.1063/1.3692107
3. Z. Y. Fang, Z. Liu, Y. M. Wang, P. M. Ajayan, P. Nordlander, and N. J. Halas, Nano Lett. 12, 3808 (2012). 10.1021/nl301774e
4. G. Giovannetti, P. A. Khomyakov, G. Brocks, V. M. Karpan, J. van den Brink, and P. J. Kelly, Phys. Rev. Lett. 101, 026803 (2008). 10.1103/PhysRevLett.101.026803
5. E. Voloshina and Y. Dedkov, Phys. Chem. Chem. Phys. 14, 13502 (2012). 10.1039/c2cp42171b
6. Y. M. Lin, C. Dimitrakopoulos, K. A. Jenkins, D. B. Farmer, H.-Y. Chiu, A. Grill, and P. Avouris, Science 327, 662 (2010). 10.1126/science.1184289
7. M. Liu, X. Yin, E. Ulin-Avila, B. Geng, T. Zentgraf, L. Ju, F. Wang, and X. Zhang, Nature 474, 64 (2011). 10.1038/nature10067
8. F. Xia, T. Mueller, Y.-M. Lin, A. Valdes-Garcia, and P. Avouris, Nat. Nanotechnol. 4, 839 (2009). 10.1038/nnano.2009.292
9. E. Guerriero, L. Polloni, M. Bianchi, A. Behnam, E. Carrion, L. G. Rizzi, E. Pop, and R. Sordan, ACS Nano 7, 5588-5594 (2013). 10.1021/nn401933v
10. P. A. Khomyakov, G. Giovannetti, P. C. Rusu, G. Brocks, J. van den Brink, and P. J. Kelly, Phys. Rev. B 79, 195425 (2009). 10.1103/PhysRevB.79.195425
11. Q. J. Wang and J. G. Che, Phys. Rev. Lett. 103, 066802 (2009). 10.1103/PhysRevLett.103.066802
12. C. Gong, D. Hinojos, W. Wang, N. Nijem, B. Shan, R. M. Wallace, K. Cho, and Y. J. Chabal, ACS Nano 6, 5381 (2012). 10.1021/nn301241p
13. K. S. Kim, Y. Zhao, H. Jang, S. Y. Lee, J. M. Kim, K. S. Kim, J. H. Ahn, P. Kim, J. Y. Choi, and B. H. Hong, Nature 457, 706 (2009). 10.1038/nature07719
14. Y. Li, A. D. Sarkar, B. Pathak, and R. Ahuja, Appl. Phys. Lett. 102, 243905 (2013). 10.1063/1.4811494
15. M. Mavrikakis, B. Hammer, and J. K. Norskov, Phys. Rev. Lett. 81, 2819 (1998). 10.1103/PhysRevLett.81.2819
16. M. Zhou, Y. Lu, C. Zhang, and Y. Feng, Appl. Phys. Lett. 97, 103109 (2010). 10.1063/1.3486682
17. M. Zhou, A. Zhang, Z. Dai, Y. Feng, and C. Zhang, J. Phys. Chem. C 114, 16541 (2010). 10.1021/jp105368j
18. B. Huang, J. J. Yu, and S. H. Wei, Phys. Rev. B 84, 075415 (2011). 10.1103/PhysRevB.84.075415
19. P. Merino, M. Svec, A. L. Pinardi, G. Otero, and J. A. Martin-Gago, ACS Nano 5, 5627 (2011). 10.1021/nn201200j
20. R. He, L. Zhao, N. Petrone, K. S. Kim, M. Roth, J. Hone, P. Kim, A. Pasupathy, and A. Pinczuk, Nano Lett. 12, 2408 (2012). 10.1021/nl300397v
21. G. Kresse and J. Furthmüller, Phys. Rev. B 54, 11169 (1996). 10.1103/PhysRevB.54.11169
22. P. E. Blöchl, Phys. Rev. B 50, 17953 (1994). 10.1103/PhysRevB.50. 17953
23. L. Adamska, Y. Lin, A. J. Ross, M. Batzill, and I. I. Oleynik, Phys. Rev. B 85, 195443 (2012). 10.1103/PhysRevB.85.195443
24. S. Grimme, J. Comput. Chem. 27, 1787 (2006). 10.1002/jcc.20495
25. A. Tkatchenko and M. Scheffler, Phys. Rev. Lett. 102, 073005 (2009). 10.1103/PhysRevLett.102.073005
26. M. Vanin, J. J. Mortensen, A. K. Kelkkanen, J. M. Garcia-Lastra, K. S. Thygesen, and K. W. Jacobsen, Phys. Rev. B 81, 081408 (2010). 10.1103/PhysRevB.81.081408
27. J. Lahiri, T. Miller, L. Adamska, I. Oleynik, and M. Batzill, Nano Lett. 11, 518 (2011). 10.1021/nl103383b
28. M. Fuentes-Cabrera, M. I. Baskes, A. V. Melechko, and M. L. Simpson, Phys. Rev. B 77, 035405 (2008). 10.1103/PhysRevB.77.035405
29. D. C. Elias, R. V. Gorbachev, A. S. Mayorov, S. V. Morozov, A. A. Zhukov, P. Blake, L. A. Ponomarenko, I. V. Grigorieva, K. S. Novoselov, F. Guinea, and A. K. Geim, Nat. Phys. 7, 701 (2011). 10.1038/nphys2049
30. W. Köster and H. Franz, Metall. Rev. 6, 1 (1961). 10.1179/095066061790425893
31. E. Friis, R. Lakes, and J. Park, J. Mater. Sci. 23, 4406 (1988). 10.1007/BF00551939
32. J. Slawinska, P. Dabrowski, and I. Zasada, Phys. Rev. B 83, 245429 (2011). 10.1103/PhysRevB.83.245429
33. S. Sarma, S. Adam, E. Hwang, and E. Rossi, Rev. Mod. Phys. 83, 407 (2011). 10.1103/RevModPhys.83.407
34. A. L. Walter, S. Nie, A. Bostwick, K. S. Kim, L. Moreschini, Y. J. Chang, D. Innocenti, K. Horn, K. F. McCarty, and E. Rotenberg, Phys. Rev. B 84, 195443 (2011). 10.1103/PhysRevB.84.195443