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Physical Review Letters

Volumn 111, Issue 15, 2013, Pages

Amorphization driven by defect-induced mechanical instability

(4) Jiang, Chao a Zheng, Ming Jie a Morgan, Dane a Szlufarska, Izabela a

a Wisconsin Electric Machines and Power Electronics Consortium (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AB INITIO MOLECULAR DYNAMICS SIMULATION; COMPARATIVE STUDIES; CRITICAL AMORPHIZATION DOSE; DEFECT ACCUMULATION; DISPLACEMENTS PER ATOMS; MECHANICAL INSTABILITIES; PAIR CORRELATION FUNCTIONS; SILICON CARBIDES (SIC);

AMORPHIZATION; DEFECTS; MOLECULAR DYNAMICS; SILICON CARBIDE;

ZIRCONIUM COMPOUNDS;

EID: 84885359848 PISSN: 00319007 EISSN: 10797114 Source Type: Journal
DOI: 10.1103/PhysRevLett.111.155501 Document Type: Article

Times cited : (41)

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